Taiwan Semiconductor Manufacturing Comp. Ltd.

Chieh-Chih Chou

Meng-Han Lin

Kong-Beng Thei

Chih-Wen Hsiung

Yu-Ching Chang

Jiun-Pyng You

A Schottky barrier diode is provided, which includes a semiconductor substrate, a first well region, an isolation region, a silicide layer and a silicon oxide-containing layer. The first well region of a first conductivity type is in the semiconductor substrate. The isolation region is in the first well region. The silicide layer is laterally adjacent to the isolation region, and over and in contact with the first well region. The silicon oxide-containing layer is over and in contact with the isolation region.

Schottky barrier diode

A fuse structure and method for fabricating same are disclosed. The fuse structure is designed for opening by conventional laser energy application. The fuse structure is characterized by an absence of high stress areas in the surrounding substrate thereby resulting in higher fabrication yields due to lower occurrence of substrate fracturing or other damage occasioned by the opening of the fuse.

Growing community of inventors

Taipei, Taiwan

Chieh-Chih Chou