Taiwan Semiconductor Manufacturing Comp. Ltd.

Chieh Cheng

Shahaji B More

Zheng-Yang Pan

Yi Chen Ho

Chi-Hsun Lin

Yu-Chuan Chen

Some implementations described herein provide a method that includes forming a set of fins of a device, where the set of fins comprises an isolation fin disposed between a first fin and a second fin of the set of fins. The method also includes forming an isolation structure on at least one side of the isolation fin, with the isolation fin providing electrical isolation between the first fin and the second fin of the set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming a funnel-shaped isolation structure between a first set of fins and a second set of fins. Additionally, or alternatively, some implementations described herein provide a method that includes forming, after forming a first gate structure and a second gate structure, an isolation structure between the first gate structure and the second gate structure.

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Hsinchu, Taiwan

Chieh Cheng