Maven Optronics Co., Ltd.

International Display Systems, Inc.

Dielectric Systems, Inc.

Maven Optronics Corp.

Maven Optronics International, Ltd.

Chieh Chen

Tsung-Hsi Wang

Chung J Lee

Atul Kumar

Chia-Hsien Chang

Ping-Lin Wu

Chung-Shu Liao

Yuri Pikovsky

George Tzeng

Hsiuwen Wang

Junwei Chung

A curved full-array LED light panel, a curved backlight module including the curved full-array LED light panel, and a curved LCD including the backlight module are disclosed. The curved full-array LED light panel includes a flexible reflective sheet and a plurality of LED light bars wherein a plurality of LEDs are disposed. The plurality of LED light bars are attached to a sheet-rear side of the flexible reflective sheet alone a direction parallel to the height direction of the full-array LED light panel, and the plurality of LEDs disposed on the LED light bars are exposed from a plurality of openings of the flexible reflective sheet toward an LCD panel. Along a direction parallel to the width direction of the full-array LED light panel, the flexible reflective sheet is deformed to form a curved reflective surface. Each of the LED light bars further comprises a bar-shaped PCB, and a plurality of LED dimming-zone circuits are disposed on the bar-shaped PCB. Full-array local dimming of the curved full-array LED light panel can be achieved by controlling the electric current of the LED dimming-zone circuits.

Curved full-array LED light panel, curved backlight module and curved LCD

A chip-scale packaging (CSP) light-emitting device (LED) is provided with an electrode polarity identifier, and includes a light-emitting semiconductor chip and a packaging structure. A first horizontal direction and a perpendicular second horizontal direction are specified on a semiconductor-chip-upper surface. The packaging structure covers the semiconductor-chip-upper surface, a first semiconductor-chip-side surface and a second semiconductor-chip-side surface of the light-emitting semiconductor chip, and includes a first package-side surface and a second package-side surface. A first region is between the first package-side surface and the first semiconductor-chip-side surface, and a second region is between the second package-side surface and the second semiconductor-chip-side surface, wherein an area of the first region is different from an area of the second region. An orientation of the electrode polarity of the CSP LED can be visually identified by recognizing the area difference of the first region and the second region.

Chip-scale packaging light-emitting device with electrode polarity identifier and method of manufacturing the same

A chip-scale linear light-emitting device includes a submount substrate, light-emitting diode (LED) semiconductor chips, a chip-scale packaging structure and a reflective structure. The LED semiconductor chips, the packaging structure and the reflective structure are disposed on the submount substrate, wherein the packaging structure partially covers the chip-upper surface and/or the chip-edge surfaces of the LED semiconductor chips, and the reflective structure partially covers the package-top surface and/or the package-side surfaces of the packaging structure. If one of the chip-edge surfaces and the package-side surface of the packaging structure are exposed from the reflective structure as a primary light-emitting side surface, a side-view type linear light-emitting device is formed. If the package-top surface of the packaging structure is exposed from the reflective structure as a primary light-emitting top surface, a top-view type linear light-emitting device is formed. A substantially transparent light-transmitting material and/or a photoluminescent material can be configured to be included inside the packaging structure. In this configuration, a primary light emitted from the LED semiconductor chips is directed to pass through the packaging structure and radiated outward from the primary light-emitting surface. Therefore, a monochromatic light or a white light with a uniformly distributed linear radiation pattern can be generated using the chip-scale linear light-emitting device.

Chip-scale linear light-emitting device

An asymmetrically shaped chip-scale packaging (CSP) light-emitting device (LED) includes an LED chip, a photoluminescent structure (or a light-transmitting structure), and a reflective structure. The photoluminescent structure covers the upper surface and/or the edge surface of the LED chip; and the reflective structure at least partially covers the edge surface of the photoluminescent structure. The reflective structure partially reflects the primary light emitted from the edge surface of the LED chip or the converted secondary light radiated from the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically.

Asymmetrically shaped light-emitting device, backlight module using the same, and method for manufacturing the same

A light-emitting device includes a flip-chip LED semiconductor chip to provide a primary light, a photoluminescent (PL) structure disposed on the LED semiconductor chip and a moisture-barrier reflective structure covering a chip-edge surface of the LED semiconductor chip and a photoluminescent-side surface of the PL structure. The sequentially stacked PL structure includes a first PL layer, a transparent isolation layer, a second PL layer and a transparent moisture barrier layer. For example, the LED semiconductor chip emits a blue light, the first PL layer includes a red phosphor material, and the second PL layer includes a green quantum dot (QD) material. Therefore, the red phosphor material of the first PL layer can convert a portion of the higher-energy-level blue light into a lower-energy-level converted red light, so as to reduce an intensity of an unconverted portion of the blue light reaching the green QD material within the second PL layer.

Quantum dot-based color-converted light emitting device and method for manufacturing the same

A chip scale packaging (CSP) light emitting diode (LED) device includes a flip-chip LED semiconductor die and a beam shaping structure (BSS) to form a monochromatic CSP LED device. A photoluminescent structure can be disposed on the LED semiconductor die to form a phosphor-converted white-light CSP LED device. The BSS is fabricated by dispersing light scattering particles with concentration equal to or less than 30% by weight into a polymer resin material, and is disposed adjacent to the edge portion of the photoluminescent structure or the LED semiconductor die; or disposed remotely above the photoluminescent structure or the LED semiconductor die. The BSS disposed at the edge portion of the device can reduce the edge-emitting light of the device; while the BSS disposed at the top portion of the device can reduce the top-emitting light of the device, therefore shaping the radiation pattern and the viewing angle of the device.

Light emitting device with beam shaping structure and manufacturing method of the same

A light emitting device, including an LED semiconductor die, a photoluminescent structure and a reflector, is disclosed. The photoluminescent structure with a beveled edge surface is disposed on top of the LED semiconductor die, wherein a lower surface of the photoluminescent structure adheres to an upper surface of the LED semiconductor die. A reflective resin material is disposed surrounding edge surfaces of the LED semiconductor die and the photoluminescent structure forming a beveled reflector. A method to manufacture the above light emitting device is also disclosed. Advantages of this light emitting device with beveled reflector include increasing the light extraction efficiency, making the viewing angle tunable, improving spatial color uniformity and reducing the light source etendue realized in a compact form-factor size.

Light emitting device with beveled reflector and manufacturing method of the same

A method for mass arrangement of micro-component devices includes the following process stages: disposing the micro-component devices to float on a liquid suspending medium, wherein the micro-component devices are spaced apart from each other with a larger initial gap along a first direction and along a second direction; using electromagnetic force to actuate the floating micro-component devices to move closer so that the micro-component devices become spaced apart from each other with a smaller specified target gap along the first and the second directions; and transferring the arranged micro-component devices with the target gap on a carrier substrate. A system for arranging the micro-component devices is also disclosed to implement the method. Therefore, a precisely arranged array of the micro-component devices can be formed on a target application substrate.

Method and system for mass arrangement of micro-component devices

A vacuum system for film lamination, including a vacuum chamber module, a film-pressing module, a substrate susceptor module and a hot-plate heating module, is disclosed, wherein the film-pressing module includes a film-pressing platen, and the substrate susceptor module includes a substrate susceptor supported by a spring-loaded mechanism. During a film-lamination process, the film-pressing platen is actuated to move downwards to attach a laminating film onto a substrate, and the substrate susceptor is actuated to move downwards and finally rest on the hot-plate heating module. Therefore an adhesive glue disposed between the laminating film and the substrate can be thermally cured. After completing the film-lamination process, the film-pressing platen is actuated upwards so that the substrate susceptor also is actuated to move upwards to its initial position by a restoring force exerted by the spring-loaded mechanism. In such manner, the laminating film can be properly bonded to the substrate to avoid lamination defects such as air bubbles and to improve adhesion strength.

System and method for vacuum film lamination

A monochromatic chip-scale packaging (CSP) light emitting diode (LED) device with an asymmetrical radiation pattern, including a flip-chip LED semiconductor die, and a reflective structure, is disclosed. A white-light broad-spectrum CSP LED device with asymmetrical radiation pattern is also disclosed by further including a photoluminescent structure in the CSP LED device. The photoluminescent structure covers at least the upper surface of the LED semiconductor die. The reflective structure adjacent to the LED semiconductor die and the photoluminescent structure reflects at least partial light beam emitted from the edge surface of the LED semiconductor die or the edge surface of the photoluminescent structure, therefore shaping the radiation pattern asymmetrically. A method to fabricate the aforementioned CSP LED device is also disclosed. Without using additional optical lens, the CSP LED device is suitable for the applications requiring asymmetrical illuminations, while keeping the advantage of its compact form factor.

Light emitting device with asymmetrical radiation pattern and manufacturing method of the same

A Chip-Scale Packaging (CSP) LED device and a method of manufacturing the same are disclosed. The CSP LED device includes a flip-chip LED semiconductor die and a packaging structure, wherein the packaging structure comprises a soft buffer layer, a photoluminescent structure and an encapsulant structure. The soft buffer layer includes a top portion formed on top of the flip-chip LED semiconductor die, and an edge portion formed covering an edge surface of the flip-chip LED semiconductor die, wherein the top portion has a convex surface, and the edge portion has an extension surface smoothly adjoining the convex surface. The photoluminescent structure is formed on the soft buffer layer covering the convex surface and the extension surface of the soft buffer layer. The encapsulant structure, which has a hardness not lower than that of the buffer layer, is formed on the photoluminescent structure. Therefore, the CSP LED device has improved reliability by improving adhesion strength between the flip-chip LED semiconductor die and the packaging structure, and improved optical performance such as more consistent correlated color temperature (CCT), more uniform spatial color, and higher optical efficacy.

Chip scale packaging light emitting device and manufacturing method of the same

A photoluminescent display device includes a blue light source and a photoluminescent display panel adjoining the blue light source. The photoluminescent display panel includes a transparent substrate, a color filter structure and a photoluminescent structure. The color filter structure includes a red pixel region, a green pixel region and a blue pixel region arranged adjacent to one another on the transparent substrate. The photoluminescent structure, which is disposed on the color filter structure and is facing toward the blue light source, includes a red light-conversion layer and a green light-conversion layer, wherein the red light-conversion layer is disposed on the green light-conversion layer. With this vertically stacked arrangement of the light-conversion layers, the photoluminescent display device can have higher optical energy utilization efficiency and a wider viewing angle, while being easier to be manufactured by relaxing the specification of accurate pixel-level alignment among the light-conversion layers and the color filter structure.

Photoluminescent display device and method for manufacturing the same

A chip-scale packaging (CSP) LED device, comprising an LED semiconductor die and a packaging structure, is disclosed. The LED semiconductor die is encapsulated by the packaging structure, wherein the lower surface of the packaging structure has a recessed space underneath. A manufacturing method of the CPS LED device is also disclosed.

Growing community of inventors

Palo Alto, CA, United States of America

Chieh Chen