Showa Denko Materials Co., Ltd.

Hitachi Chemical Company, Ltd.

Resonac Corporation

Chie Sugama

Yoshinori Ejiri

Hideo Nakako

Yuki Kawana

Dai Ishikawa

Kazuhiko Kurafuchi

Motohiro Negishi

Michiko Natori

Yuichi Yanaka

An embodiment of the present invention provides a method for producing a bonded object. The method comprises a step for preparing a laminate in which a first member, a copper bonding paste, and a second member are laminated in order and a step for sintering the copper bonding paste under a pressure of 0.1-1 MPa. The copper bonding paste contains metal particles and a dispersion medium, wherein the content of metal particles is at 50 mass % or more with respect to the total mass of the copper bonding paste, and the metal particles contain 95 mass % or more of submicro copper particles with respect to the total mass of the metal particles.

Method for producing bonded object and semiconductor device and copper bonding paste

This member connection method includes a printing step. In the printing step, a coating film-formed region in which the coating film is formed, and a coating film non-formed region in which the coating film is not formed are formed in the print pattern, and the coating film-formed region is divided into a plurality of concentric regions and a plurality of radial regions by means of a plurality of line-shaped regions provided so as to connect various points, which are separated apart from one another in the marginal part of the connection region.

Member connection method

A method for manufacturing a thermoelectric conversion module of the present invention is a method for manufacturing a thermoelectric conversion module including a thermoelectric semiconductor part in which a plurality of p-type semiconductors and a plurality of n-type semiconductors are alternately arranged, and a high temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a high temperature heat source side and a low temperature side electrode bound to a binding surface of the p-type semiconductor and the n-type semiconductor on a low temperature heat source side, which electrically connect the p-type semiconductor and the n-type semiconductor adjacent to each other in series, and includes a binding step of binding at least one of the high temperature side electrode and the low temperature side electrode, and the p-type semiconductor and the n-type semiconductor together, by sintering a binding layer containing metal particles, which is provided between the electrode and the semiconductor.

Method for manufacturing thermoelectric conversion module, thermoelectric conversion module, and binder for thermoelectric conversion module

A copper paste for pressureless bonding is a copper paste for pressureless bonding, containing: metal particles; and a dispersion medium, in which the metal particles include sub-micro copper particles having a volume average particle diameter of greater than or equal to 0.01 &#x3bc;m and less than or equal to 0.8 &#x3bc;m, and micro copper particles having a volume average particle diameter of greater than or equal to 2.0 &#x3bc;m and less than or equal to 50 &#x3bc;m, and the dispersion medium contains a solvent having a boiling point of higher than or equal to 300&#xb0; C., and a content of the solvent having a boiling point of higher than or equal to 300&#xb0; C. is greater than or equal to 2 mass % on the basis of a total mass of the copper paste for pressureless bonding.

Copper paste for pressureless bonding, bonded body and semiconductor device

Provided is a method for producing a joined body, the method including a first step of preparing a laminated body which includes a first member having a metal pillar provided on a surface thereof, a second member having an electrode pad provided on a surface thereof, and a joining material provided between the metal pillar and the electrode pad and containing metal particles and an organic compound, and a second step of heating the laminated body to sinter the joining material at a predetermined sintering temperature, in which the joining material satisfies the condition of the following Formula (I):()/&#xd7;100&#x2265;1.0&#x2003;&#x2003;(I)[in Formula (I), Mrepresents a mass of the joining material when a temperature of the joining material reaches the sintering temperature in the second step, and Mrepresents a non-volatile content in the joining material.]

Method for producing joined body, and joining material

Provided is a metal paste for joints, containing: metal particles; and linear or branched monovalent aliphatic alcohol having 1 to 20 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 &#x3bc;m to 0.8 &#x3bc;M.

Metal paste for joints, assembly, production method for assembly, semiconductor device, and production method for semiconductor device

Provided is A metal paste for joints, containing: metal particles; and monovalent carboxylic acid having 1 to 9 carbon atoms, in which the metal particles include sub-micro copper particles having a volume average particle diameter of 0.12 &#x3bc;m to 0.8 &#x3b7;m, and a content of the monovalent carboxylic acid having 1 to 9 carbon atoms is 0.015 part by mass to 0.2 part by mass with respect to 100 parts by mass of the metal particles.

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 &#x3bc;m to 0.8 &#x3bc;m, and flake-shaped micro copper particles having a maximum particle size of 1 &#x3bc;m to 20 &#x3bc;m, and an aspect ratio of 4 or greater, and the amount of the micro copper particles contained, which are included in the metal particles and have a maximum particle size of 1 &#x3bc;m to 20 &#x3bc;m and an aspect ratio of less than 2, is 50% by mass or less on the basis of a total amount of the flake-shaped micro copper particles.

Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device

Provided is a copper paste for joining including copper particles, second particles including a metal element other than copper, and a dispersion medium, in which the copper particles include submicro copper particles having a volume-average particle diameter of 0.12 &#x3bc;m or more and 0.8 &#x3bc;m or less and micro copper particles having a volume-average particle diameter of 2 &#x3bc;m or more and 50 &#x3bc;m or less, a sum of a content of the submicro copper particles and a content of the micro copper particles is 80% by mass or more of a sum of masses of the copper particles and the second particles, the content of the submicro copper particles is 30% by mass or more and 90% by mass or less of a sum of a mass of the submicro copper particles and a mass of the micro copper particles, and a content of the second particles is 0.01% by mass or more and 10% by mass or less of the sum of the masses of the copper particles and the second particles.

Provided is a joined body including: a first member; a second member; and a sintered metal layer that joins the first member and the second member. The sintered metal layer includes a structure that is derived from flake-shaped copper particles which are oriented in approximately parallel to an interface between the first member or the second member, and the sintered metal layer, and the amount of copper contained in the sintered metal layer is 65% by volume or greater on the basis of a volume of the sintered metal layer.

Assembly and semiconductor device

Provided is copper paste for joining including metal particles, and a dispersion medium. The metal particles include sub-micro copper particles having a volume-average particle size of 0.12 &#x3bc;m to 0.8 &#x3bc;m, and micro copper particles having a volume-average particle size of 2 &#x3bc;m to 50 &#x3bc;m, a sum of the amount of the sub-micro copper particles contained and the amount of the micro copper particles contained is 80% by mass or greater on the basis of a total mass of the metal particles, and the amount of the sub-micro copper particles contained is 30% by mass to 90% by mass on the basis of a sum of a mass of the sub-micro copper particles and a mass of the micro copper particles.

Growing community of inventors

Tokyo, Japan

Chie Sugama