Nichia Corporation

Osaka University

Tokai National Higher Education and Research System

National University Corporation Tokai National Higher Education and Research System

Tanaka Kikinzoku Kogyo K.k.

National University Corporation Tokai National

Chie Miyamae

Tsukasa Torimoto

Tatsuya Kameyama

Susumu Kuwabata

Taro Uematsu

Daisuke Oyamatsu

Kenta Niki

Marino Kishi

Hiroki Yamauchi

Yuki Mori

Yuusuke Ohshima

Tomoya Kubo

Mariko Hasegawa

Shojiro Kikuchi

The present invention relates to a semiconductor nanoparticle composed of a compound containing Ag, Au, S and a metal M as essential constitutional elements. In the present invention, the metal M is at least any of Al, Ga, In, Tl, Zn, Cd, Hg and Cu, and the compound has a total content of Ag, Au, S and the metal M of 95 mass % or more. In addition, a ratio (x/(x+y)) of the number of atoms of Ag to a sum of the number of atoms of Ag, x, and the number of atoms of Au, y, in the AgAuS-based multicomponent compound is preferably 0.50 or more and 0.88 or less. The semiconductor nanoparticle of the present invention has appropriate emission and extinction characteristics and is biocompatible.

Semiconductor nanoparticles composed of AgAuS-based multicomponent compound

Provided is a method for producing semiconductor nanoparticles. The method includes: providing first semiconductor nanoparticles containing a semiconductor containing an element M1, an element M2 and an element Z, wherein the element M1 is at least one element selected from the group consisting of Ag, Cu, Au and an alkali metal, and contains at least Ag, the element M2 is at least one element selected from the group consisting of Al, Ga, In and Tl, and contains at least one of In and Ga, and the element Z contains at least one element selected from the group consisting of S, Se and Te; and heat-treating a mixture containing the first semiconductor nanoparticles, a first compound having a Ga—S bond, a second compound containing Ga and not containing S, and an organic solvent to obtain second semiconductor nanoparticles.

Method for producing semiconductor nanoparticles and light-emitting device

Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.

Semiconductor nanoparticles, method of producing the semiconductor nanoparticles, and light-emitting device

Semiconductor nanoparticles are provided. The semiconductor nanoparticles contains Ag, at least one of In and Ga, and Se. An Ag content is 10 mol % to 30 mol %, a total content of the at least one of In and Ga is 15 mol % to 35 mol %, and an Se content is 35 mol % to 55 mol % in the semiconductor nanoparticles. The semiconductor nanoparticles emit light having an emission spectrum with a peak emission wavelength in a range of 500 nm to 900 nm, and a half bandwidth of 250 meV or less upon irradiation with light in a wavelength range of 350 nm to less than 500 nm.

A method of producing semiconductor nanoparticles, semiconductor nanoparticles, and a light-emitting device are provided. The method includes heat-treating a mixture containing a salt of Ag, a salt containing at least one of In and Ga, an Se supply source, and an organic solvent at a temperature in the range of above 200&#xb0; C. to 370&#xb0; C. In the method, the ratio of the number of Ag atoms to the total number of In and Ga atoms in the mixture is above 0.43 to 2.5. The semiconductor nanoparticles contains Ag, at least one of In and Ga, and Se. The light-emitting device includes a light conversion member containing the semiconductor nanoparticles and a semiconductor light-emitting element.

Growing community of inventors

Nagoya, Japan

Chie Miyamae