Tokyo Electron Limited

Chie Kato

Eiichi Nishimura

Akitaka Shimizu

Jun Yamawaku

Masato Kushibiki

Hiroyuki Takahashi

A substrate processing method that can selectively remove deposit produced through dry etching of silicon. A substrate has a silicon base material and a hard mask that is made of a silicon nitride film and/or a silicon oxide film and formed on the silicon base material, the hard mask having an opening to which at least part of the silicon base material is exposed. A trench corresponding to the opening is formed in the silicon base material through dry etching using plasma produced from halogenated gas. After the dry etching, the substrate is heated to a temperature of not less than 200&#xb0; C., and then hydrogen fluoride gas and helium gas are supplied toward the substrate.

Substrate processing method and substrate processing apparatus

A substrate processing method that can remove a silicon nitride film without damaging a thermally-oxidized film. A substrate having at least a thermally-oxidized film and a silicon nitride film formed on the thermally-oxidized film is heated to a temperature of not less than 60&#xb0; C. Then, hydrogen fluoride gas is supplied toward the substrate.

A plasma etching apparatus is arranged to perform main etching for etching a poly-crystalline silicon film by use of Cl/SF/Nplasma obtained by exciting Clgas, SFgas, and Ngas, and over etching for etching the poly-crystalline silicon film by use of Cl/HBr/CFplasma obtained by exciting Clgas, HBr gas, and CFgas. In the main etching, Ngas is added to suppress formation of roughness on a poly-crystalline silicon surface and attain a sufficient etching rate.

Growing community of inventors

Nirasaki, Japan

Chie Kato