Panasonic Corporation

Nuvoton Technology Corporation Japan

Panasonic Semiconductor Solutions Co., Ltd.

Chie Fujioka

Toshiyuki Yokoe

Daichi Kumano

Yoshihiro Matsushima

Hiroshi Yoshida

Mitsuaki Sakamoto

Hideki Mizuhara

Masao Hamasaki

A semiconductor device includes: a semiconductor layer that includes principal surfaces; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, is thicker than the semiconductor layer, and comprises a first metal material; a metal layer that includes principal surfaces, is disposed with the principal surface in contact with the principal surface, and comprises a metal material having a Young's modulus greater than that of the first metal material; and transistors. The transistor includes a source electrode and a gate electrode on a side facing the principal surface. The transistor includes a source electrode and a gate electrode on a side facing the principal surface.

Semiconductor device

Terminals () are divided into two along a common boundary, coatings () most suitable for two conductive bonding materials () to be used are exposed on the terminals (), the most suitable one of the coatings () is selected, and the corresponding conductive bonding material () is bonded onto the coating. Thus it is possible to improve the reliability of bonding and easily reduce a bonding resistance while suppressing a decrease in the reliability of a semiconductor element

Semiconductor device and method of manufacturing the same

Retaining regionsandare added to a pad shaped portionof leads and a die padthat are electrically connected via a conductive ribbon, so that during the bonding of the ribbon, strong ultrasonic waves can be applied in a state in which the retaining regionsandare pressed and fixed. It is therefore possible to reduce a resistance at a joint while firmly bonding the conductive ribbon. Further, the bonding strength of the conductive ribbonincreases and thus it is possible to eliminate the need for stacking the conductive ribbonsand easily reduce a stress caused by ultrasonic waves on a semiconductor chip

By increasing the area of a source electrodeof a semiconductor elementand the area of a source terminalof a lead frame, it is possible to extend a jointof the source electrodebonded to a conductive ribbonand a jointof the source terminal. Thus it is possible to reduce an on resistance and easily reduce the number of times a bonding tool comes into contact with the joints to reduce a stress on the semiconductor element

Growing community of inventors

Kyoto, Japan

Chie Fujioka