Vanguard International Semiconductor Corporation

Chich-Shang Chang

Wong-Cheng Shih

Lan Lin Chao

Tai-Bor Wu

A method for forming a dielectric-constant-enhanced capacitor is provided. A wafer in a reaction chamber is provided, wherein said wafer comprises a first conductive layer. Then, a first dielectric layer is formed above said first conductive layer to prevent said first conductive layer from growing silicon oxide and to diminish leakage current. Next a precursor is transmitted to a vaporizer. Then said precursor is transformed to a gas and said gas is transmitted to said reaction chamber. Next, a second dielectric layer is deposited above said first dielectric layer. Then a heat treatment is proceeded and a second conductive layer is formed on said second dielectric layer.

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Pa Te, Taiwan

Chich-Shang Chang