Other

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Shenzhen China Star Optoelectronics Technology Co., Ltd.

Tcl China Star Optoelectronics Technology Co., Ltd.

Chiayu Lee

Shujhih Chen

Chunche Hsu

Yongming Yin

Bo He

Yongwei Wu

Miao Duan

Pei Jiang

Huafei Xie

Wei Zhang

Yong Fan

Macai Lu

Minggang Liu

Hunglung Hou

Shuichih Lien

A display panel, a light-emitting device, and a driving method thereof are provided. The light-emitting device includes a substrate, and a first electrode, a first light-emitting unit, a connecting layer, a second light-emitting unit, and a second electrode stacked up sequentially on the substrate. Polarities of the first electrode and the second electrode are opposite and reverse periodically in order that the first light-emitting unit and the second light-emitting unit illuminate alternately.

Display panel, light-emitting device, and driving method thereof

A method of preparing a film and a light-emitting device are disclosed. The method includes: providing at least one gas-phase source above a substrate, the at least one gas-phase source made of materials comprising a perovskite material; and controlling an evaporation rate of the at least one gas-phase source to form a perovskite film. In the method provided by the present invention, a perovskite light-emitting layer is prepared by gas-phase source evaporation coating without an organic solvent, which avoids miscibility between the organic solvent and other layers and improves compatibility between the perovskite material and other film materials, thereby realizing the low preparation cost and the simple preparation process.

Method of preparing perovskite light-emitting layer and display application thereof

A present application provides a light-emitting device and a method of manufacturing the same. The light-emitting device includes an anode, a hole transport layer, a light-emitting layer, an electron transport layer, and a cathode all laminated together. The hole transport layer is treated with a high boiling point polar solution to reduce a Coulomb force of the hole transport layer. The light-emitting device of the present application can improve light-emitting efficiency of the light-emitting device.

Light-emitting device having surface-treated hole transport layer and manufacturing method thereof

The present disclosure provides a micro light emitting diode display panel, a method for fabricating the same, and a display device comprising the same. The micro light emitting diode display panel includes an active layer, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, a pixel electrode, a micro light emitting diode, and a gate insulating layer covering the active layer, the gate insulating layer, the gate electrode, the source electrode, and the drain electrode. The light shielding layer blocks light emitted by the micro light emitting diode from being incident on the thin film transistor, thereby reducing influence of the light emitted by the micro light emitting diode light on the thin film transistor.

Micro light emitting diode display panel, method for fabricating same, and display device

The present application discloses a perovskite light-emitting device, a preparation method thereof, and a display. The perovskite light-emitting device includes a first injection layer, a first transport layer, a light-emitting layer, a second transport layer, and a second injection layer, which are sequentially stacked, wherein the first injection layer includes indium tin oxide, the second injection layer includes carbon nanotubes, the light-emitting layer includes halide perovskite, and light emitted by the light-emitting layer is simultaneously emitted from the first injection layer and the second injection layer. The perovskite light-emitting device of the present application can stably emit light on double sides.

Perovskite light-emitting device, preparation method thereof, and display

A thin film transistor, a manufacturing method of the same, and a CMOS inverter are provided. The thin film transistor includes a base substrate, a dielectric layer, and a semiconductor layer. A first channel is provided between the source and the drain. Carbon nanotubes are provided in the first channel. A second channel is provided between the drain and the gate. An ion gel is provided in the second channel. By regulating a composition of the ion gel and a content of a dopant, a threshold voltage of a carbon nanotube thin film transistor is effectively controlled.

Thin film transistor, manufacturing method of same, and CMOS inverter

A light-emitting device and a manufacturing method thereof are provided. The light-emitting device includes an anode, a luminous layer, and a cathode, which are disposed in a stacked manner, and a material of the luminous layer includes a perovskite material. A first transport layer is further provided between the luminous layer and the anode, and the first transport layer is configured to transport holes. Alternatively, a second transport layer is further provided between the cathode and the luminous layer, and the second transport layer is configured to transport electrons.

Light-emitting device and manufacturing method thereof

A display panel and a display device are provided. The display panel includes pixel units arranged in an array, scan signal lines, data signal lines, and pulse width modulation signal lines. Each scan signal line is coupled to a row of the pixel units and outputs a scan signal to the pixel units. Each data signal line is coupled to a column of the pixel units and outputs a data signal to the pixel unit. Each pulse width modulation signal line is coupled to a row of the pixel units and outputs a pulse width modulation signal to the pixel unit and controls lighting time of the pixel unit to achieve different gray levels. The display panel can achieve low brightness driving display and avoid occurrence of excessive brightness caused by excessive current of the light emitting element.

Display panel and display device

The present disclosure provides a manufacturing method of a complementary metal-oxide-semiconductor (CMOS) inverter includes annealing a substrate printed with an oxide ink to obtain a first active layer, printing a carbon tube ink between a first source and the first drain to form a second active layer for obtaining a first thin-film transistor (TFT), forming a second source and a second drain on two sides of the first active layer to obtain a second TFT, and forming wires between the first TFT and the second TFT.

Manufacturing method of CMOS inverter

A transfer method and a transfer device of micro LEDs are provided. By horizontally and vertically stretching a tensile substrate evenly to make horizontal distances and vertical distances between the adjacent micro LEDs achieve predetermined target values, and at last, bonding the micro LEDs spaced apart into the target values to an array substrate. The method does not need to manufacture a patterned mold or a patterned transfer head, and production period is reduced, and production cost is lowered, which effectively improves current transfer methods of the micro LEDs.

Transfer method and transfer device of micro LED

A thin film transistor includes a gate terminal, an insulation layer formed on the gate terminal, a first semiconductor silicon layer formed on the insulation layer, a source terminal formed on the first semiconductor silicon layer, and a drain terminal. The drain terminal is partially located on the insulation layer and the first semiconductor silicon layer. The drain terminal and the gate terminal overlap each other via the insulation layer to form a first overlap region and also overlap each other via the first semiconductor silicon layer and the insulation layer to form a second overlap region. The first and second overlap regions respectively generate first and second parasitic capacitances. The thin film transistor includes a compensation structure, whereby when the drain terminal is shifted with respect to the gate terminal, the compensation structure maintaining area of the first overlap region and area of the second overlap region unchanged.

Growing community of inventors

Shenzhen, China

Chiayu Lee