Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Chiara Sabbione

Gabriele Navarro

Marie-Claire Cyrille

Mathieu Bernard

Lamine Benaissa

Lea Di Cioccio

Bruno Imbert

Laurent Vandroux

Paul Gondcharton

Guillaume Rodriguez

Guillaume Bourgeois

Jean-Pierre Nieto

Anna-Lisa Serra

Camille Laguna

A selection element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 20 nm.

Selection element with a plurality of amorphous layers

A method for programming a phase change memory including a first layer of a phase change material capable of switching between a crystalline and an amorphous state and vice versa, the method including applying a programming current through the first layer so that an evolution of the areal density of this current as a function of time t decreases from a first level, between a first time and a second time, following a first evolution in time respecting, or being close to where K is a constant.

Method for programming a phase change memory

A phase-change storage element including, in a first portion, a stack of amorphous layers, the thickness of each layer in the stack being smaller than or equal to 5 nm.

Storage element

A bonding between a first substrate and a second substrate, the method includes the steps of: a) providing the first substrate and the second substrate, b) forming a first bonding layer having tungsten oxide on the first substrate and a second bonding layer having tungsten oxide on the second substrate, at least one of the first bonding layer and of the second bonding layer including a third element M so as to form an MWxOy-type alloy, the atomic content of M in the composition of the alloy being between 0.5 and 20% and preferably between 1 and 10%, c) carrying out a direct bonding between the first bonding layer and the second bonding layer, and d) performing a heat treatment at a temperature greater than 250&#xb0; C.

Direct bonding method

A direct bonding method between at least a first layer () comprising silicon oxide having a thickness equal to or higher than about 10 nm and a second layer () of material having hydrophilicity, comprising at least the steps of:

Method for the direct bonding of a silicon oxide layer

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Grenoble, France

Chiara Sabbione