Taiwan Semiconductor Manufacturing Comp. Ltd.

Chiao-Chi Wang

Chung-Chuan Tseng

Chia-Ping Lai

Yeh-Hsun Fang

Chia-Wei Liu

Li-Hsin Chu

Yu-Wei Chen

Zong-Jie Wu

Szu-Chien Tseng

A semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes silicon. The second semiconductor structure is embedded in the first semiconductor structure, in which the second semiconductor structure has at least one convex portion and at least one concave portion. The convex portion and the concave portion are on at least one edge of the second semiconductor structure, and a shape of the concave portion includes rectangle, trapezoid, inverted trapezoid, or parallelogram. The second semiconductor structure includes germanium, elements of group III or group V, or combinations thereof. The convex portion of the second semiconductor structure has a top surface substantially coplanar with a top surface of the first semiconductor structure.

Semiconductor device

Various embodiments of the present disclosure are directed towards methods for forming an image sensor in which a device layer overlies and has a different semiconductor material than a substrate and in which the device layer has high crystalline quality. Some embodiments of the methods include: epitaxially growing the device layer on the substrate; patterning the device layer to form a trench dividing the device layer into mesa structures corresponding to pixels; forming an inter-pixel dielectric layer filling the trench and separating the mesa structures; and forming photodetectors in the mesa structures. Other embodiments of the methods include: depositing the inter-pixel dielectric layer over the substrate; patterning the inter-pixel dielectric layer to form cavities corresponding to the pixels; epitaxially growing the mesa structures in the cavities; and forming the photodetectors in the mesa structures.

Methods for forming image sensors

A method includes forming a plurality of openings extending into a substrate from a front surface of the substrate. The substrate includes a first semiconductor material. Each of the plurality of openings has a curve-based bottom surface. The method includes filling the plurality of openings with a second semiconductor material. The second semiconductor material is different from the first semiconductor material. The method includes forming a plurality of pixels that are configured to sense light in the plurality of openings, respectively, using the second semiconductor material.

Image sensor device and methods of forming the same

A semiconductor device with dummy and active pixel structures and a method of fabricating the same are disclosed. The semiconductor device includes a first pixel region with a first pixel structure, a second pixel region, surrounding the first pixel region, includes a second pixel structure adjacent to the first pixel structure and electrically isolated from the first pixel structure, and a contact pad region with a pad structure disposed adjacent to the second pixel region. The first pixel structure includes a first epitaxial structure disposed within a substrate and a first capping layer disposed on the first epitaxial structure. The second pixel structure includes a second epitaxial structure disposed within the substrate and a second capping layer disposed on the second epitaxial structure. Top surfaces of the first and second epitaxial structures are substantially coplanar with each other. The first and second epitaxial structures includes a same semiconductor material.

Image sensors with dummy pixel structures

A method of forming an image sensor includes forming a photodiode within a semiconductor substrate. The method further includes disposing an interconnect structure over the semiconductor substrate. The interconnect structure includes a contact etch stop layer (CESL) over the photodiode; and a plurality of dielectric layers over the CESL, wherein at least one dielectric layer of the plurality of dielectric layers comprises a low dielectric constant (low-k) material. The method further includes patterning at least the plurality of dielectric layers, wherein patterning at least the plurality of dielectric layers comprises defining an opening above an active region of the photodiode. The method further includes depositing a cap layer on sidewalls of the opening, wherein the cap layer includes a dielectric material having a higher moisture resistance than the low-k dielectric material.

Method of making an image sensor with sidewall protection

A semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes silicon. The second semiconductor structure is embedded in the first semiconductor structure, in which the second semiconductor structure has at least one convex portion and at least one concave portion. The convex portion and the concave portion are on at least one edge of the second semiconductor structure, and a shape of the concave portion includes rectangle, trapezoid, inverted trapezoid, or parallelogram. The second semiconductor structure includes germanium, elements of group III or group V, or combinations thereof.

Semiconductor device and method of manufacturing the same

A method for fabricating an image sensor is described which includes forming an insulating layer on a semiconductor substrate and forming a recess in the semiconductor substrate and the insulating layer. An epitaxial structure is grown in the recess. A first polish treatment is then performed to the insulating layer and the epitaxial structure. The insulating layer is detected to obtain a signal intensity, and the signal intensity increases as a thickness of the insulating layer decreases. The first polish treatment stops when the signal intensity reaches a target value.

Image sensor and method for fabricating the same

An image sensor includes a photodiode within a semiconductor substrate and an interconnect structure over the semiconductor substrate. The interconnect structure includes a contact etch stop layer (CESL), a plurality of dielectric layers over the CESL and a plurality of metallization layers in the plurality of dielectric layers. At least one dielectric layer of the plurality of dielectric layers includes a low-k dielectric material. An opening is extended through the plurality of dielectric layers to expose a portion of the CESL above an active region of the photodiode. A cap layer is on sidewalls of the opening. The cap layer includes a dielectric material having a higher moisture resistance than the low-k dielectric material.

Image sensor with sidewall protection and method of making same

A semiconductor device includes a substrate, a logic gate structure, a photosensitive gate structure, a hard mask layer, a first spacer, a first source, a first drain, a second spacer, a second source and a second drain. The logic gate structure and the photosensitive gate structure are disposed on a surface of the substrate. The hard mask layer covers the logic gate structure, the photosensitive gate structure and the surface of the substrate. The first spacer overlies the hard mask layer conformal to a sidewall of the logic gate structure. The first source and drain are respectively disposed in the substrate at two opposite sides of the logic gate structure. The second spacer overlies the hard mask layer conformal to a sidewall of the photosensitive gate structure. The second source and drain are respectively disposed in the substrate at two opposite sides of the photosensitive gate structure.

Growing community of inventors

Taoyuan, Taiwan

Chiao-Chi Wang