Taiwan Semiconductor Manufacturing Comp. Ltd.

Chiang-Lang Yen

Ling-Sung Wang

Ying-Lin Chen

A method is provided for the removal of liner oxide from the surface of a gate electrode during the creation of the gate electrode. A layer of gate oxide is formed over the surface of a substrate, a layer of gate electrode is deposited over the layer of gate oxide. The gate electrode is deposited, gate spacers are formed over the liner oxide, exposing surfaces of the liner oxide. The created structure is nitrided by a plasma stream containing N/H, reducing the etch rate of the exposed liner oxide. The liner oxide is then removed by applying a wet etch, contact regions to the gate electrode are salicided.

Approach to prevent undercut of oxide layer below gate spacer through nitridation

A new method is provided for the removal of liner oxide from the surface of a gate electrode during the creation of the gate electrode. A layer of gate oxide is formed over the surface of a substrate, a layer of gate electrode such as polyimide is deposited over the layer of gate oxide. The gate electrode and the layer of gate oxide are patterned. A layer of liner oxide is deposited, gate spacers are formed over the liner oxide, exposing surfaces of the liner oxide. The created structure is nitrided by a plasma stream containing N /H , reducing the etch rate of the exposed liner oxide. The liner oxide is then removed by applying a wet etch, contact regions to the gate electrode are salicided.

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Taichung, Taiwan

Chiang-Lang Yen