Hamamatsu-Photonics K.k.

Denso Corporation

Tokai National Higher Education and Research System

Toyota Jidosha Kabushiki Kaisha

Mirise Technologies Corporation

National University Corporation Tokai National Higher Education and Research System

Asahi Kasei Kabushiki Kaisha

Chiaki Sasaoka

Daisuke Kawaguchi

Masatake Nagaya

Shoichi Onda

Jun Kojima

Hiroshi Amano

Toshiki Yui

Keisuke Hara

Kazukuni Hara

Yasunori Igasaki

Atsushi Tanaka

Yotaro Wani

Ryuji Sugiura

Junji Ohara

Takashi Ishida

Ziyi Zhang

Shinichi Hoshi

Maki Kushimoto

Takashi Ushijima

Tomomi Aratani

Shosuke Nakabayashi

Hiroki Watanabe

Seiya Hasegawa

A semiconductor device includes a gallium nitride substrate and a pattern film disposed on a front surface of the gallium nitride substrate. In the gallium nitride substrate, a Young's modulus in a first direction along the front surface is larger than a Young's modulus in a second direction along the front surface and orthogonal to the first direction. A first ratio R1 obtained by dividing a dimension of the gallium nitride substrate in the first direction by a dimension of the gallium nitride substrate in the second direction and a second ratio R2 obtained by dividing a dimension of the pattern film in the first direction by a dimension of the pattern film in the second direction satisfy a relationship of R1<R2.

Semiconductor device and manufacturing method of semiconductor device

There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step.

Laser processing method, semiconductor member manufacturing method, and laser processing device

A semiconductor chip includes a chip-constituting substrate having one surface, the other surface opposite to the one surface, and two pairs of opposing side surfaces connecting the one surface and the other surface. The one surface and the other surface are along one of a {c-plane, a {-m-plane, and a {-a-plane. One of the two pairs of opposing side surfaces is along another one of the {c-plane, the {-m-plane, and the {-a-plane. The other of the two pairs of opposing side surfaces is along the other of the {c-plane, the {-m-plane, and the {-a-plane. The side surface includes an altered layer containing gallium oxide and gallium metal in a surface layer portion in a depth direction which is a normal direction to the side surface.

Semiconductor chip and method for manufacturing the same

A manufacturing method of a semiconductor device, includes: forming a gas vent recess in a first surface of a compound semiconductor substrate, which includes a plurality of device regions adjacent to the first surface, along an interface between the plurality of device regions; forming an altered layer inside the compound semiconductor substrate to extend along the first surface at a depth corresponding to a range of a depth of the gas vent recess by applying a laser beam; dividing the compound semiconductor substrate at the altered layer into a first part including the first surface and a second part including a second surface of the compound semiconductor substrate opposite to the first surface; and forming a metal film to cover a divided surface of the first part while exposing the gas vent recess.

Manufacturing method of semiconductor device

A semiconductor chip includes a chip constituent substrate having a first surface and a second surface, and including a layer containing gallium nitride. The chip constituent substrate is provided with a semiconductor element, and components constituting the semiconductor element are located more in an area adjacent to the first surface than in an area adjacent to the second surface. The chip constituent substrate is formed with a through hole penetrating the chip constituent substrate from the first surface to the second surface. The through hole defines a first opening adjacent to the first surface and a second opening adjacent to the second surface, and the first opening is larger than the second opening.

There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as not to overlap the plurality of first modified spots, by causing laser light to enter into the semiconductor object from the surface.

A method of producing an ultraviolet laser diode with a low oscillation threshold current density includes stacking a first cladding layer, a light-emitting layer, and a second cladding layer on a substrate in this order to form a nitride semiconductor laminate (step S), etching at least a portion of the nitride semiconductor laminate to form a mesa structure and setting the ratio between the length of the resonator end faces and the length of the side surfaces of the mesa structure in plan view between 1:5 and 1:500 (step S), disposing first conductive material on a portion of a first area and applying heat treatment of 400° C. or higher to form a first electrode (step S), and disposing a second conductive material in an area on the second cladding layer, at a distance of 5 μm or more from the side surfaces, to form a second electrode (step S).

Method of producing ultraviolet laser diode, and ultraviolet laser diode

A gallium nitride semiconductor device includes: a chip formation substrate made of gallium nitride and having one surface and an other surface opposite to the one surface; a one surface side element component disposed on the one surface and providing a component of an one surface side of a semiconductor element; and a metal film constituting a back surface electrode in contact with the other surface. The other surface has an irregularity provided by a plurality of convex portions with a trapezoidal cross section and a plurality of concave portions located between the convex portions; and an upper base surface of the trapezoidal cross section in each of the plurality of convex portions is opposed to the one surface.

Gallium nitride semiconductor device and method for manufacturing the same

A semiconductor chip includes: an epitaxial film made of gallium nitride; a semiconductor element disposed in the epitaxial film; a chip formation substrate including the epitaxial film and having a first surface, a second surface opposite to the first surface, and a side surface connecting the first surface and the second surface; and a convex and a concavity on the side surface.

A method for manufacturing a gallium nitride semiconductor device includes: preparing a gallium nitride wafer; forming an epitaxial growth film on the gallium nitride wafer to provide a processed wafer having chip formation regions; perform a surface side process on a one surface side of the processed wafer; removing the gallium nitride wafer and dividing the processed wafer into a chip formation wafer and a recycle wafer; and forming an other surface side element component on an other surface side of the chip formation wafer.

Growing community of inventors

Nagoya, Japan

Chiaki Sasaoka