Denso Corporation

Kabushiki Kaisha Toyota Chuo Kenkyusho

Chiaki Ogawa

Kazuhiro Inoguchi

Tsunenobu Hori

Kaoru Kuzuoka

Motoki Satou

Katsunori Yamada

Itsuhei Ogata

Takao Kobayashi

Yasuhiro Oya

Mitsuhiro Konno

A temperature sensor includes a metal tube having an opening tip portion, a temperature sensing element for measuring a temperature, a pair of lead wires contacting with a surface of the temperature sensing element, an insulating support material for insulating the pair of lead wires from the metal tube, and a coating material for covering the temperature sensing element, lead tip portions of the pair of lead wires, and a tip surface of the insulating support material at the opening tip portion of the metal tube. The coating material has a property of not allowing measurement target gas to pass through and contains oxide and at least one of platinum, platinum alloy, and platinum-containing oxide that are dispersed in the oxide.

Temperature sensor

A temperature sensorincludes: a thermosensitive elementcomposed of a low-thermal expansion ceramics having a coefficient of linear expansion of 3&#xd7;10/&#xb0; C. to 5&#xd7;10/&#xb0; C. and of which electrical characteristics change depending on temperature; a pair of electrode filmsprovided on the surfaces of the thermosensitive element; and a pair of lead wires having a coefficient of linear expansion of 15&#xd7;10/&#xb0; C. or less and bonded to the electrode films. When the coefficients of linear expansion of the thermosensitive element, the electrode film, and the lead wireare respectively T(/&#xb0; C.), T(/&#xb0; C.), and T(/&#xb0; C.), the temperature sensorsatisfies a relationship T&#x2266;T&#x2266;T.

Temperature sensor including thermosensitive element

A temperature sensing element includes a thermistor composed of Si-base ceramics and a pair of metal electrodes bonded onto the surfaces of the thermistor. The metal electrodes contain Cr and a metal element &#x3b1; having a Si diffusion coefficient higher than that of Cr. A diffusion layer is formed in a bonding interface between the thermistor and each metal electrode, the diffusion layer including a silicide of the metal element &#x3b1; in a crystal grain boundary of the Si-base ceramics. A temperature sensor including the diffusion layers is provided. Owing to the diffusion layers, the temperature sensor ensures heat resistance and bonding reliability and enables temperature detection with high accuracy in a temperature range, in particular, of from &#x2212;50&#xb0; C. to 1050&#xb0; C.

Temperature sensor element, method for manufacturing same, and temperature sensor

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Tajimi, Japan

Chiaki Ogawa