Adeka Corporation

Chiaki Mitsui

Atsushi Yamashita

Masako Hatase

Tomoharu Yoshino

Keisuke Takeda

Yoshiki Ooe

Ryota Fukushima

Provided is a thin-film forming raw material, which is used in an atomic layer deposition method, including an yttrium compound represented by the following general formula (1): where Rrepresents a secondary alkyl group having 3 to 8 carbon atoms, Rrepresents a tertiary alkyl group having 4 to 8 carbon atoms, and Rrepresents a hydrogen atom, or a primary, secondary, or tertiary alkyl group having 1 to 5 carbon atoms.

Thin-film forming raw material used in atomic layer deposition method, and method of producing thin-film

Provided is a thin-film forming raw material, including an alkoxide compound represented by the following general formula (1): where Rto Reach independently represent an alkyl group having 1 to 5 carbon atoms, M represents a rare earth metal atom, and 'n' represents a valence of the rare earth metal atom.

Thin-film forming raw material, thin-film and method of producing thin-film

The present invention provides an amidinate compound represented by the following general formula (1) or a dimer compound thereof, and a method of producing a thin-film including using the compound as a raw material: where Rand Reach independently represent an alkyl group having 1 to 5 carbon atoms, Rrepresents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms, M represents a metal atom or a silicon atom, and 'n' represents the valence of the atom represented by M, provided that at least one hydrogen atom of Rto Ris substituted with a fluorine atom.

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Tokyo, Japan

Chiaki Mitsui