Kyocera Corporation

Chiaki Doumoto

Takehiro Nishimura

Daisuke Ueyama

Takeshi Kamikawa

A crystal growth method of the present disclosure includes: preparing a crystal growth-derived-layer forming substrate including (a) a substrate having a surface layer, (b) a mask pattern which is formed on the surface layer and which includes a plurality of strip bodies, and (c) a plurality of crystal growth-derived layers which are formed between and on the plurality of stripe bodies so as to have gaps therebetween above the plurality of strip bodies and which differ in lattice constant from the substrate having the surface layer; and growing semiconductor layers on the plurality of crystal growth-derived layers. The semiconductor layers are respectively grown on the plurality of crystal growth-derived layers formed so as to be separated from each other, and semiconductor layers on two adjacent ones of the plurality of crystal growth-derived layers are separated from each other.

Crystal growth method and a substrate for a semiconductor device

A light emitting element housing package of the present disclosure includes a base part including a first surface including a first recessed part for mounting a light emitting element. Surface roughness Sa of at least such a region of a bottom surface of the first recessed part that is opposite to a light emitting element mounted on the first recessed part is smaller than surface roughness Sa of a region other than the first recessed part of the first surface. Further, a light emitting device of the present disclosure includes the light emitting element housing package and a light emitting element housed in the light emitting element housing package. Further, a light emitting module of the present disclosure includes the light emitting device and a module substrate on which the light emitting device is mounted.

Light emitting element housing package, light emitting device, and light emitting module

A crystal growth method of the present disclosure includes: preparing a substrate having a surface layer; forming a mask pattern including a plurality of strip bodies on the surface layer to separate the surface layer into segments by the plurality of strip bodies and expose part of the surface layer; and forming, on a plurality of growth regions constituted by the exposed part of the surface layer, a crystal growth-derived layer by causing a semiconductor crystal which differs in lattice constant from the substrate to grow by a vapor-phase growth process. Each of the plurality of strip bodies has side faces inclined so that a width between the side faces gradually decreases with distance from the surface layer.

Crystal growth method and semiconductor device manufacturing method

A multipiece element storage package of the present disclosure includes: a mother substrate which includes first element storage package regions, second element storage package regions, a dummy region, a first surface, and a second surface; a first stem electrode disposed in a part of the dummy region which part is in the first surface; and a second stem electrode disposed on the second surface. The first element storage package regions and the second element storage package regions each include a frame body disposed on the first surface, a first wiring conductor disposed on the first surface, and including one end located inside the frame body and the other end connected to the first stem electrode, and a second wiring conductor including one end which is located on the first surface and inside the frame body and the other end which is connected to the second stem electrode.

Multipiece element storage package and multipiece optical semiconductor device

A semiconductor module of the present disclosure includes: a base body including a groove part of which two inner side surfaces are inclined, the base body including an electrode pad which is provided on at least one inner side surface; and a semiconductor element including a semiconductor substrate including a first surface, a second surface opposite to the first surface, and two side surfaces which are inclined in a diagonal direction to the first surface and are opposite to each other, a semiconductor layer located on the first surface, and an electrode disposed on at least one side surface. The semiconductor element is located in the groove part so that the at least one side surface is disposed along the at least one inner side surface of the base body, and at least one electrode of the semiconductor element is connected to the electrode pad of the base body.

Growing community of inventors

Goleta, CA, United States of America

Chiaki Doumoto