Taiwan Semiconductor Manufacturing Comp. Ltd.

Chia-Yun Cheng

Yu-Yun Peng

Hsu-Kai Chang

Chen-Hao Wu

Han-De Chen

Kenichi Sano

Huang-Lin Chao

Kuei-Lin Chan

Wei-Ting Yeh

Yi-Rui Chen

Zheng-Yong Liang

A method for manufacturing a semiconductor structure includes: forming a first bonding layer on a device substrate, the first bonding layer including a first bonding sub-layer and a second bonding sub-layer, the first bonding sub-layer including a first metal oxide material in an amorphous state and a plurality of metal nanoparticles, the second bonding sub-layer including a second metal oxide material in an amorphous state; forming a second bonding layer on a carrier substrate, the second bonding layer including a third metal oxide material in an amorphous state; conducting a surface modification process on the first and second bonding layers; bonding the device and carrier substrates to each other through the first and second bonding layers; and annealing the first and second bonding layers to convert the first, second, and third metal oxide materials from the amorphous state to a crystalline state.

Metal nanoparticles in an amorphous bonding layer between a device substrate and carrier substrate

Growing community of inventors

Hsinchu, Taiwan

Chia-Yun Cheng