National Cheng-kung University

Taiwan Semiconductor Manufacturing Comp. Ltd.

United Microelectronics Corp.

Chia-Yun Chen

Po-Hsuan Hsiao

Ta-Cheng Wei

Tien-Hao Tang

Keng-Ying Liao

Su-Yu Yeh

Po-Zen Chen

Huai-jen Tung

Mei-Ling Chao

Tai-Hsiang Lai

Chin-Yu Lin

Pin-Ju Chien

Meng-Chen Lo

Tzu-Yu Ou

Yi-Yin Lin

Kuan-Yi Kuo

A method for manufacturing a thermoelectric polymer film includes steps as follows. A conductive polymer liquid and a plurality of carbon nanotubes are mixed to form a mixture. The mixture is coated on a substrate to form a film precursor. Two electrode parts are arranged on the film precursor. An electric field is applied to the film precursor through the two electrode parts at a room temperature, so as to change an arrangement of the plurality of carbon nanotubes, such that the thermoelectric polymer film is formed.

Thermoelectric polymer film, manufacturing method thereof, power supply device and temperature control device

A method for manufacturing modified metal nanoparticles includes steps as follows. Metal nanoparticles are provided, wherein each of the metal nanoparticles is a gold nanoparticle or a silver nanoparticle. An ascorbic acid solution is provided, wherein the ascorbic acid solution includes ascorbic acid molecules and/or ascorbic acid ions. A surface modification step is conducted, wherein the metal nanoparticles and the ascorbic acid solution are mixed, such that surfaces of the metal nanoparticles are modified by the ascorbic acid molecules and/or ascorbic acid ions to obtain the modified metal nanoparticles.

Modified metal nanoparticle and method for manufacturing the same

A method for manufacturing a tungsten trioxide/silicon nanocomposite structure includes steps as follows. A silicon substrate is provided, wherein a surface of the silicon substrate is formed with a plurality of microstructures. A tungsten trioxide precursor solution is provided, wherein the tungsten trioxide precursor solution is contacted with the silicon substrate. A hydrothermal synthesis step is conducted, wherein the tungsten trioxide precursor solution is reacted to form a plurality of tungsten trioxide particles on the plurality of microstructures, so as to obtain the tungsten trioxide/silicon nanocomposite structure.

Tungsten trioxide/silicon nanocomposite structure, method for manufacturing the same and gas sensing device having the same

A method for manufacturing a silver-carbon composite includes steps as follows. A carbon-containing solution is provided, wherein a carbon-containing material is subjected to a calcination step and is dissolved by a solvent to obtain the carbon-containing solution. The carbon-containing solution includes a plurality of carbon nanodots, and the carbon nanodots are negatively charged. A silver ion-containing solution is provided, wherein the silver ion-containing solution includes a plurality of silver ions. The carbon-containing solution and the silver ion-containing solution are mixed to obtain a mixed solution. The mixed solution is heated, such that at least one of the silver ions is reduced on at least one of the carbon nanodots to obtain the silver-carbon composite.

Method for manufacturing silver-carbon composite

A method for fabricating a semiconductor device is provided. The method includes forming a metal catalyst layer on an etching area of the semiconductor substrate; performing a wet etch process to the semiconductor substrate to etch the etching area of the semiconductor substrate under the metal catalyst layer, thereby forming a trench in the semiconductor substrate; and removing the metal catalyst layer from the semiconductor substrate after performing the wet etch process.

Method for forming a semiconductor device

A LDNMOS device for an ESD protection circuit including a P-type substrate and an N-type deep well region is provided. The P-type substrate includes a first area and a second area. The N-type deep well region is in the first and second areas of the P-type substrate. The LDNMOS device further includes a gate electrode disposed on the P-type substrate between the first and second areas, a P-type implanted region disposed in the first area of the P-type substrate, an N-type grade region disposed in the N-type deep well region of the first area, an N-type first doped region disposed in the N-type grade region, a P-type body region disposed in the N-type deep well region of the second area, an N-type second doped region disposed in the P-type body region, and a P-type doped region disposed in the P-type body region and adjacent to the N-type second doped region.

Device for ESD protection circuit

Growing community of inventors

Taipei, Taiwan

Chia-Yun Chen