Taiwan Semiconductor Manufacturing Comp. Ltd.

Chia-Yu Wei

Hsin-Chi Chen

Yen-Liang Lin

Kuo-Cheng Lee

Hsun-Ying Huang

Yung-Lung Hsu

Chi-Cherng Jeng

Volume Chien

Chin-Hsun Hsiao

Cheng-Yuan Li

Zen-Fong Huang

Yi-Hsing Chu

Ching-Hung Kao

Fu-Cheng Chang

Ping-Hao Lin

Chia-Pin Cheng

Su-Hua Chang

Yu Ting Kao

Wen-I Hsu

Yu-Ting Kao

Yun-Wei Cheng

Chun-Hao Chou

Chia-Jung Hsu

Chia-Cheng Ho

Yu-Chang Jong

Ming-Hsien Yang

Chuan-Pu Liu

Fei-Yun Chen

Kun-Huei Lin

Ssu-Chiang Weng

Yu-Hsuan Cheng

Po-Chun Chiu

Huan-En Lin

Allen Tseng

Yi-Sheng Liu

Chan-Yu Hung

Kuo-cheng Lee

Ching-Ling Cheng

Yin-Chen Chen

Yu Ling Ou

The present disclosure provides a high-dynamic range (HDR) pixel circuit, which includes a pixel subcircuit and a light-responsive switch circuit. The pixel subcircuit includes a photodetector, a capacitor, and a source-follower transistor. The source-follower transistor is enabled using a power supply voltage provided by the light-responsive switch circuitin response to the HDR pixel circuit being in a low light illuminance. The source-follower transistor is enabled using a first voltage generated by the photodetector in response to the HDR pixel circuit being in a high light illuminance. A first voltage detected by the photodetector and a second voltage associated with electric charges stored in the capacitor are outputted to form a HDR pixel value.

High dynamic-range (HDR) pixel circuit, color-image sensor package structure, and method for operating HDR pixel circuit

A semiconductor device includes a plurality of isolation structures, wherein each isolation structure of the plurality of isolation structures is spaced from an adjacent isolation structure of the plurality of isolation structures. The semiconductor device further includes a gate structure. The gate structure includes a first sidewall and a second sidewall angled with respect to the first sidewall. The gate structure further includes a first surface extending between the first sidewall and the second sidewall, wherein a dimension of the gate structure in a first direction is less than a dimension of each of the plurality of isolation structures in the first direction.

Wide channel semiconductor device

A semiconductor device may include a single-photon avalanche diode (SPAD) arranged for illumination at a back surface of a substrate. The semiconductor device may include a full deep trench isolation (FDTI) structure between the SPAD and a neighboring SPAD of the semiconductor device. The FDTI may be associated with isolating the SPAD from the neighboring SPAD. The FDTI structure may include a shallow trench isolation (STI) element at the back surface of the substrate. The FDTI structure may include a deep trench isolation (DTI) element at a front surface of the substrate.

Single-photon avalanche diode semiconductor device

A semiconductor structure is provided. The semiconductor structure includes a substrate, a deep trench isolation (DTI), an interconnect structure, and a conductive pillar. The DTI is disposed in the substrate and the interconnect structure is disposed over the substrate. The conductive pillar extends from the interconnect structure toward the substrate and penetrates the DTI. A method of manufacturing the semiconductor structure is also provided.

Semiconductor structure and method of manufacturing the same

An image sensor includes a pixel array, a dielectric layer, a plurality of first conductive shielding regions, and a plurality of second conductive shielding regions. The pixel array includes photodiodes within a substrate. The dielectric layer is over the substrate. From a plan view, the first conductive shielding regions are adjacent four corners of the pixel array, and the second conductive shielding regions are adjacent four sides of the pixel array. The second conductive region has a length-to-width ratio greater than a length-to-width ratio of the first conductive region.

Backside illuminated image sensor device with shielding layer and forming method

An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

Image sensor device

The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a substrate and a transfer gate disposed from a front-side surface of the substrate. The CMOS image sensor further comprises a photo detecting column disposed at one side of the transfer gate within the substrate. The photo detecting column comprises a doped sensing layer comprising one or more recessed portions along a circumference of the doped sensing layer in parallel to the front-side surface of the substrate. By forming the photo detecting column with recessed portions, a junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.

CMOS image sensor having indented photodiode structure

A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The semiconductor structure includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first oxide layer formed below the a first substrate, a first bonding layer formed below the first oxide layer, and a first bonding via formed through the first bonding layer and the first oxide layer. The second semiconductor device includes a second oxide layer formed over a second substrate, a second bonding layer formed over the second oxide layer, and a second bonding via formed through the second bonding layer and the second oxide layer. The semiconductor structure also includes a bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via.

Semiconductor structure

An image sensor device includes a semiconductor substrate, a radiation sensing member, a device layer, and a color filter layer. The semiconductor substrate has a photosensitive region and an isolation region surrounding the photosensitive region. The radiation sensing member is embedded in the photosensitive region of the semiconductor substrate. The radiation sensing member has a material different from a material of the semiconductor substrate, and an interface between the radiation sensing member and the isolation region of the semiconductor substrate includes a direct band gap material. The device layer is under the semiconductor substrate and the radiation sensing member. The color filter layer is over the radiation sensing member and the semiconductor substrate.

The present disclosure is directed to anchor structures and methods for forming anchor structures such that planarization and wafer bonding can be uniform. Anchor structures can include anchor layers formed on a dielectric layer surface and anchor pads formed in the anchor layer and on the dielectric layer surface. The anchor layer material can be selected such that the planarization selectivity of the anchor layer, anchor pads, and the interconnection material can be substantially the same as one another. Anchor pads can provide uniform density of structures that have the same or similar material.

Anchor structures and methods for uniform wafer planarization and bonding

A backside illuminated image sensor device with a shielding layer and a manufacturing method thereof are provided. In the backside illuminated image senor device, a patterned conductive shielding layer is formed on a dielectric layer on a backside surface of a semiconductor substrate and surrounding a pixel array on a front side surface of the semiconductor substrate.

Method of forming backside illuminated image sensor device with shielding layer

A semiconductor device includes a plurality of isolation structures, wherein each isolation structure of the plurality of isolation structures is spaced from an adjacent isolation structure of the plurality of isolation structures in a first direction. The semiconductor device further includes a gate structure. The gate structure includes a top surface; a first sidewall angled at a non-perpendicular angle with respect to the top surface; and a second sidewall angled with respect to the top surface. The gate structure further includes a first horizontal surface extending between the first sidewall and the second sidewall, wherein the first horizontal surface is parallel to the top surface, and a dimension of the gate structure in a second direction, perpendicular to the first direction, is less than a dimension of each of the plurality of isolation structures in the second direction.

A method includes providing a semiconductor substrate having a front side surface and a back side surface opposite to the front side surface. A photosensitive region of the semiconductor substrate is etched to form a recess. A semiconductor material is deposited on the semiconductor substrate to form a radiation sensing member filling the recess. The semiconductor material has an optical band gap energy smaller than 1.77 eV. A device layer is formed over the front side surface of the semiconductor substrate and the radiation sensing member. A trench isolation is formed in an isolation region of the semiconductor substrate and extending from the back side surface of the semiconductor substrate.

Method of forming image sensor device

A semiconductor structure is provided. The semiconductor structure includes a first semiconductor device. The first semiconductor device includes a first bonding layer formed below a first substrate, a first bonding via formed through the first oxide layer and the first bonding layer, a first dummy pad formed in the first bonding layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over a second substrate, a second bonding via formed through the second bonding layer, and a second dummy pad formed in the second bonding layer. The semiconductor structure includes a bonding structure between the first substrate and the second substrate, wherein the bonding structure includes the first bonding via bonded to the second bonding via and the first dummy pad bonded to the second dummy pad.

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Tainan, Taiwan

Chia-Yu Wei