Taiwan Semiconductor Manufacturing Comp. Ltd.

Chia Yu Wang

Meng-Chun Shih

Chih-Yang Chang

Tien-Wei Chiang

Ching-Huang Wang

Harry-Hak-Lay Chuang

Chia-Hsiang Chen

Chih-Hui Weng

In some embodiments, a semiconductor wafer testing system is provided. The semiconductor wafer testing system includes a semiconductor wafer prober having one or more conductive probes, where the semiconductor wafer prober is configured to position the one or more conductive probes on an integrated chip (IC) that is disposed on a semiconductor wafer. The semiconductor wafer testing system also includes a ferromagnetic wafer chuck, where the ferromagnetic wafer chuck is configured to hold the semiconductor wafer while the wafer prober positions the one or more conductive probes on the IC. An upper magnet is disposed over the ferromagnetic wafer chuck, where the upper magnet is configured to generate an external magnetic field between the upper magnet and the ferromagnetic wafer chuck, and where the ferromagnetic wafer chuck amplifies the external magnetic field such that the external magnetic field passes through the IC with an amplified magnetic field strength.

Semiconductor wafer testing system and related method for improving external magnetic field wafer testing

The present disclosure describes a magnetic memory device. The magnetic memory device includes a magnetic sensing array configured to sense an external magnetic field strength. The magnetic memory device further includes a voltage modulator configured to, in response to the external magnetic field strength being greater than a threshold magnetic field strength, provide a test voltage different from a current write voltage of the magnetic memory device. The magnetic memory device further includes an error check array configured to use the test voltage as a write voltage of the error check array and provide a bit error rate corresponding to the test voltage. The magnetic memory device further includes a control unit configured to adjust, based on the bit error rate being equal to or less than a threshold bit error rate, a write voltage of the magnetic memory device from the current write voltage to the test voltage.

Magnetic memory device

In a method of testing a multilayer structure containing a magnetic layer, one or more network parameters are measured of a waveguide that is electromagnetically coupled with the multilayer structure as a function of frequency and as a function of a magnetic field applied to the multilayer structure during the measuring of the network parameters. Based on the measured one or more network parameters, at least one magnetic property of the magnetic layer of the multilayer structure is determined. The network parameters in some embodiments are S-parameters. The at least one magnetic property may include an effective anisotropy field of the magnetic layer and/or a damping constant of the magnetic layer.

Magnetic layer characterization system and method

In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data sate. The first random bit is then read from the MRAM cell.

Magnetoresistive random-access memory (MRAM) random number generator (RNG) and a related method for generating a random bit

In some embodiments, a method for generating a random bit is provided. The method includes generating a first random bit by providing a random number generator (RNG) signal to a magnetoresistive random-access memory (MRAM) cell. The RNG signal has a probability of about 0.5 to switch the resistive state of the MRAM cell from a first resistive state corresponding to a first data state to a second resistive state corresponding to a second data state. The first random bit is then read from the MRAM cell.

A test apparatus includes a tray including at least a first region and a second region, and a cap disposed over the tray. The cap includes a cap body, and at least a first magnet and a second magnet disposed over the cap body. The first magnet is configured to provide a first magnetic field to the first region of the tray, and the second magnet is configured to provide a second magnetic field to the second region of the tray. A strength of the first magnetic field is different from a strength of the second magnetic field.

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Hsinchu, Taiwan

Chia Yu Wang