Chung-shan Institute of Science and Technology, Armaments, Bureau, Ministry of National Defense

National Chung Shan Institute of Science and Technology

Chia-Yi Hsiang

Yang-Kuao Kuo

Ching-Hui ChiangLin

Fu-Hsing Huang

Yang-Kuo Kuo

Te-Po Liu

Hung-Tai Ku

A three-dimensional integrateds circuit structure includes a first metal circuit substrate, an interposer substrate disposed on the first metal circuit substrate and electrically connected therewith, and at least one semiconductor component disposed on the interposer substrate. The interposer substrate is used to dissipate the heat generated by the operation of the semiconductor components, so as to achieve the objective of increasing the lifespan of the semiconductor components.

Method for producing three-dimensional integrated circuit structure

Disclosed is a method for hot isostatic pressing a substrate. At first, a metal container is provided. Powder is filled in the metal container before the metal container is located in an oven. The metal container is subjected to isostatic pressing that includes heating and pressing. Thus, the metal container shrinks and presses on the powder evenly and turns the powder into a nugget. The metal container is moved out of the oven and broken to release the nugget. A substrate is cut from the nugget. With the hot isostatic pressing, the substrate exhibits only a few flaws and is large, fine, homogenous and strong so that the substrate is not vulnerable to deformation in a high-pressure environment.

Method for hot isostatic pressing a substrate

Disclosed is a method for protecting aluminum nitride from moisture. At first, a mixing apparatus is provided. Aluminum nitride powder, calcium silicate, dodecylamine, a binding agent and an anhydrous solvent are mixed with one another by the mixing apparatus. The mixture is made into grains in a granulating process. The hydrophilism, thermal stability and thermal conductivity of the dodecylamine are used to make the grains moisture-proof and not vulnerable to deterioration. Thus, the stability of the aluminum nitride is improved.

Method for protecting aluminum nitride from moisture

Disclosed is a method for removing oxygen from aluminum nitride by carbon. At first, an oven is provided. An aluminum nitride substrate is located in the oven. Nitrogen is introduced into the oven to form an atmosphere of nitrogen. The temperature is increased to the transformation point of the aluminum nitride substrate in the oven. Then, the heating is stopped and quenching is conducted in the oven. Carbon is introduced into the oven in the quenching. Thus, oxygen included in the aluminum nitride substrate reacts with the carbon to produce carbon monoxide or carbon dioxide. The carbon monoxide or carbon is released from the oven as well as the nitrogen. Thus, the aluminum nitride substrate is purified.

Growing community of inventors

Taoyuan County, Taiwan

Chia-Yi Hsiang