Silicon Integrated Systems Corporation

Fujian Jinhua Integrated Circuit Co., Ltd.

Chia-Yi Chu

Keng-Nan Chen

Jih-Ming Hsu

Chao-Wei Lin

Yu-Cheng Tung

Janbo Zhang

Wen-Chi Lin

Huixian Lai

Ssu-Che Yang

Han-Ning Chen

Tsung-Wen Chen

Chin-Hua Kuo

Song Sheng Lin

Chung-Lin Chiang

Yao-Jui Chang

Ken-Li Chen

Ching-Lin Jen

Hui-Chung Chen

A semiconductor memory device is provided in the present invention, including a substrate, word lines in the substrate, bit lines over the word lines, partition structures between the bit lines and right above the word lines, storage node contacts in spaces defined by the bit lines and the partition structures and electrically connecting with the substrate, wherein a portion of the storage node contact protruding from top surfaces of the bit lines and the partition structures is contact pad, and contact pad isolation structures on the partition structures and between the contact pads, wherein the contact pad isolation structure includes outer silicon nitride layers and inner silicon oxide layers.

Semiconductor memory device

The invention provides a memory and a forming method thereof. By connecting two node contact parts filled in two node contact windows at the edge and adjacent to each other, a large-sized combined contact can be formed, so that when preparing the node contact parts, the morphology of the combined contact at the edge position can be effectively ensured, and under the blocking protection of the combined contact with a large width, the rest of the node contact parts can be prevented from being greatly eroded, and the morphology accuracy of the independently arranged node contact parts can be improved, thereby being beneficial to improving the device performance of the formed memory.

Memory device and manufacturing method thereof

A circuit for touch sensing includes a driving unit, a self-capacitive sensor circuit, a mutual-capacitive sensor circuit and a control circuit. The driving is configured to generate a driving signal. The self-capacitive sensor circuit is configured to generate a self-capacitance sensing result. The mutual-capacitive sensor circuit is configured to receive the driving signal in order to generate a mutual-capacitance sensing result when the voltage of a node between the self-capacitive sensor circuit and the mutual-capacitive sensor circuit reaches a reference voltage. The control circuit receives and computes the self-capacitance sensing result and the mutual-capacitance sensing result in order to generate a sensing result. By utilizing the circuit for touch sensing of present disclosure, the accuracy and the efficiency of touch sensing can be enhanced.

Touch sensor circuit and touch sensor method

An active stylus pen comprises a touch component and a pressure sensing module. One end of the touch component is disposed at a nib part of the active stylus pen, wherein the touch component is configured to receive an external pressure. The pressure sensing module is connected to the touch component, wherein the pressure sensing module is configured to generate an oscillation signal, wherein the oscillation signal has a first frequency when the touch component receives the external pressure and the external pressure reaches a first threshold value, and wherein the oscillation signal is adjusted to have a second frequency when the touch component receives the external pressure and the external pressure does not reach the first threshold value; wherein a difference of the first frequency and the second frequency is larger than a second threshold value.

Active stylus pen generating oscillation frequency related to applied pressure

A capacitive touch device and a sensing method thereof are disclosed. The capacitive touch device includes a touch panel, at least one touch detection unit and a processing unit. The touch detection unit scans the touch panel, obtains an N-bit sensed data and compresses the N-bit sensed data to an L-bit sensed data. The processing unit receives the L-bit sensed data, decompresses the L-bit sensed data to the N-bit sensed data and calculates a coordinate of a touch according to the N-bit sensed data. The present invention is capable of decreasing the time for transmitting the sensed data, the power consumption and the requirements for the memory capacity of the touch detection unit and the memory capacity of the processing unit.

Capacitive touch device and sensing method thereof

A capacitive touch device and a sensing method thereof are disclosed. The capacitive touch device includes a touch panel and a plurality of touch detection units. The touch panel includes first sensing lines and second sensing lines. The position of a touch between a last one of the first sensing lines and a first one of the second sensing lines is calculated according to sensed values respectively corresponding to a first sensing line prior to the last one of the first sensing lines, the last one of the first sensing lines and the first one of the second sensing lines. The present invention is capable of avoiding the problem that the frame rate is reduced significantly because of the data transmission between the first and second touch detection units.

Capacitive touch device capable of avoiding reduced frame rate and sensing method thereof

An automatic self-calibrated oscillation method and an apparatus using the same are provided. After a static time tuning (STT) table and a run time tuning (RTT) table have been established, the apparatus converts an output clock signal to generate a current RTT value at every predefined time and then compares the current RTT value with a reference RTT value generated in response to a STT value of the STT table, or with an interpolated result generated in response to the reference RTT value to generate a deviation value. Thus, through the deviation value, the output clock signal may be calibrated to address the target frequency without the assistance of external reference clock unit or locked loop unit after the STT table and the RTT table are established.

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Hsinchu, Taiwan

Chia-Yi Chu