Taiwan Semiconductor Manufacturing Comp. Ltd.

Chia Wen Liang

Alexander Kalnitsky

Harry-Hak-Lay Chuang

Kuo-Chyuan Tzeng

Li-Feng Teng

Tsung-Hao Yeh

Chang-Chih Huang

Han-Yu Chen

Harry-hak-lay Chuang

Wei-cheng Wu

A dielectric isolation layer having a top surface may be formed over a substrate. A heater line, a phase change material (PCM) line, and an in-process conductive barrier plate may be formed over the dielectric isolation layer. An electrode material layer may be formed over the in-process conductive barrier plate. The electrode material layer and the in-process conductive barrier plate may be patterned such that patterned portions of the in-process conductive barrier plate include a first conductive barrier plate contacting a first area of a top surface of the PCM line, and a second conductive barrier plate contacting a second area of the top surface of the PCM line, and patterned portions of the electrode material layer include a first electrode contacting the first conductive barrier plate and a second electrode contacting the second conductive barrier plate.

Planarization-less phase change material switch

A semiconductor device includes a substrate, an isolation structure, a conductive structure, and a first contact structure. The isolation structure is disposed in the substrate. The conductive structure is disposed on the isolation structure. The conductive structure extends upwards from the isolation structure, in which the first contact structure has a top portion on the conductive structure and a bottom portion in contact with the isolation structure.

Electrical fuse (e-fuse) one-time programmable (OTP) device and manufacturing method thereof

Growing community of inventors

Hsinchu County, Taiwan

Chia Wen Liang