Globalwafers Co., Ltd.

Chia-Wen Ko

Wen-Ching Hsu

Manhsuan Lin

Yao-Chung Chang

Chiou-Mei Luo

A heterostructure may include a substrate having a first primary surface, a second primary surface, and a diffusion layer extending a depth into the substrate from the first primary surface; and a deposition layer disposed on the second primary surface of the substrate. The heterostructure may further include an epitaxial layer disposed on the deposition layer.

Silicon substrates with compressive stress and methods for production of the same

A laminar structure of semiconductors comprises a silicon substrate, an epitaxial layer, a protective layer, a first layer and a second layer. The epitaxial layer is arranged above the silicon substrate and the protective layer is arranged below the silicon substrate. Thermal expansion coefficients of the epitaxial layer and the protective layer are both either greater than or less than that of the silicon substrate. The first layer is arranged between the silicon substrate and the protective layer; and the second layer is arranged between the silicon substrate and the epitaxial layer, wherein the band gap of the first layer and the second layer are both greater than 3 eV. By arranging the protective layer below the silicon substrate, stress generated between the silicon substrate and the epitaxial layer can be reduced to prevent occurrence of bending or crack. Therefore, yield can be promoted and costs can be reduced.

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Hsinchu, Taiwan

Chia-Wen Ko