Novatek Microelectronics Corp.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Chia-Wei Su

Shun-Hsun Yang

Ju-Lin Huang

Teng-Chun Tsai

Keko-Chun Liang

Fu-Ting Yen

Po-Yu Tseng

Po-Hsiang Fang

Chu-Ya Hsiao

Hsin-Hung Lee

Ting-Ting Chen

Li-Tang Lin

Chih-Hao Wang

Shau-Lin Shue

Chia-Tien Wu

Wei-Hao Wu

Kai-Chieh Yang

Hsin-Ping Chen

Tse-Hung Wu

Jr-Ching Lin

Teng-Jui Yu

Chao-Kai Tu

Zhi-Chang Lin

Chung-Cheng Chou

Jia-Ni Yu

Chih Wei Lu

Wei-Hao Liao

Hsi-Wen Tien

Yung-Hsu Wu

Yi-Tzu Chen

Wei-Chen Chu

Yi-Hsuan Hsiao

Shih-Ting Hung

Po-Chin Chang

Ji-Ting Chen

Cherng-Shiaw Tsai

Yu-Chieh Liao

Ming-Zhang Kuo

Ying-Zu Lin

Wei-Hsiang Hung

Inez Fu

Gloria Wu

Chia-Hsun Kuo

Chia-Chen Lee

Embodiments of the present disclosure relates to a method for forming a semiconductor device structure. The method includes including forming one or more conductive features in a first interlayer dielectric (ILD), forming an etch stop layer on the first ILD, forming a second ILD over the etch stop layer, forming one or more openings through the second ILD and the etch stop layer to expose a top surface of the one or more first conductive features, wherein the one or more openings are formed by a first etch process in a first process chamber, exposing the one or more openings to a second etch process in a second process chamber so that the shape of the or more openings is elongated, and filling the one or more openings with a conductive material.

Semiconductor device structure and methods of forming the same

A semiconductor structure includes a substrate, a dielectric layer, a first conductive feature and a second conductive feature. The substrate includes a semiconductor device. The dielectric layer is disposed on the substrate. The first conductive feature is formed in the first dielectric layer. The second conductive feature penetrates the first conductive feature and the dielectric layer, and is electrically connected to the first conductive feature and the semiconductor device.

Semiconductor structure having deep metal line and method for forming the semiconductor structure

A method for manufacturing a semiconductor structure includes forming a plurality of dummy structures spaced apart from each other, forming a plurality of dielectric spacers laterally covering the dummy structures to form a plurality of trenches defined by the dielectric spacers, filling a conductive material into the trenches to form electrically conductive features, selectively depositing a capping material on the electrically conductive features to form a capping layer, removing the dummy structures to form a plurality of recesses defined by the dielectric spacers, filling a sacrificial material into the recesses so as to form sacrificial features, depositing a sustaining layer on the sacrificial features, and removing the sacrificial features to form air gaps confined by the sustaining layer and the dielectric spacers.

Semiconductor structure having air gaps and method for manufacturing the same

A device includes a substrate, a gate structure over the substrate, gate spacers on opposite sidewalls of the gate structure, source/drain structures over the substrate and on opposite sides of the gate structure, and a self-assemble monolayer (SAM) in contact with an inner sidewall of one of the gate spacer and in contact with a top surface of the gate structure.

Semiconductor structure and manufacturing method thereof

A method includes forming a gate structure and an interlayer dielectric (ILD) layer over a substrate; selectively forming an inhibitor over the gate structure; performing an atomic layer deposition (ALD) process to form a dielectric layer over the ILD layer, wherein in the ALD process the dielectric layer has greater growing rate on the ILD than on the inhibitor; and performing an atomic layer etching (ALE) process to etch the dielectric layer until a top surface of the inhibitor is exposed, in which a portion of the dielectric layer remains on the ILD layer after the ALE process is complete.

A method includes forming a metal layer over a substrate; forming a dielectric layer over the metal layer; removing a first portion of the dielectric layer to expose a first portion of the metal layer, while a second portion of the dielectric layer remains on the metal layer; selectively forming a first inhibitor on the second portion of the dielectric layer, while the metal layer is free of coverage by the first inhibitor; and selectively depositing a first hard mask on the exposed first portion of the metal layer, while the first inhibitor is free of coverage by the first hard mask.

Method for forming semiconductor structure

An amplifier circuit including an input amplifier, an output amplifier and a diode device is provided. The output amplifier includes a PMOSFET and an NMOSFET. The PMOSFET has a gate electrode serving as a first input end and a drain coupled to an output end. The NMOSFET has a gate electrode serving as a second input end and a drain coupled to the output end. The output amplifier outputs an output voltage at the output end, and is coupled to the input amplifier via at least one of the first and second input ends. The diode device is coupled between the output end and the at least one of the first and second input ends of the output amplifier. When a voltage difference between the output end and the at least one of the first and second input ends of the output amplifier is greater than a barrier voltage of the diode device, the diode device is turned on, and an overshoot of the output voltage is reduced.

Amplifier circuit with overshoot suppression

A semiconductor device includes a substrate, a first fin, a second fin, a dummy fin, a first metal gate, a second metal gate, and an isolation structure. The first, the second and the dummy fins are on the substrate, and the dummy fin is disposed between the first fin and the second fin. The first metal gate and the second metal gate are over the first fin and the second fin, respectively. The isolation structure is on the dummy fin, and the dummy fin and the isolation structure separate the first metal gate and the second metal gate.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a substrate, a gate structure over the substrate, gate spacers on opposite sidewalls of the gate structure, an inhibitor residue over gate structure and between the gate spacers, and source/drain structures on opposite sides of the gate structure. The inhibitor residue lines a sidewall of one of the gate spacers.

An amplifier circuit including an input amplifier, an output amplifier and a diode device is provided. The output amplifier is coupled to the input amplifier and outputs an output voltage. The diode device is coupled between an output end and an input end of the output amplifier. When a voltage difference between the output end and the input end of the output amplifier is greater than a barrier voltage of the diode device, the diode device is turned on, and an overshoot of the output voltage is reduced.

A method includes forming a gate stack and an interlayer dielectric (ILD) over a substrate, wherein the interlayer dielectric is adjacent to the gate stack; forming an inhibitor covering the interlayer dielectric such that the gate stack is exposed from the inhibitor; performing a deposition process to form a conductive layer over the gate stack until the conductive layer starts to form on the inhibitor, in which the deposition process has a deposition selectivity for the gate stack with respect to the inhibitor; and performing an etching process to remove a portion of the conductive layer over the inhibitor.

A data control circuit includes an output stage circuit, a switch circuit, and an impedance module. The output stage circuit outputs a data signal. An input terminal of the switch circuit is coupled to an output terminal of the output stage circuit, and an output terminal of the switch circuit is coupled to a post-stage circuit. According to a control of a control signal, the switch circuit determines whether to transmit the data signal of the output stage circuit to the post-stage circuit. The impedance module is configured in the output stage circuit, configured between the output stage circuit and the switch circuit, or configured in the switch circuit. Here, the impedance module reduces noise flowing from the switch circuit to the output stage circuit.

Data control circuit

An amplifier circuit including an input amplifier, an output amplifier and a diode device is provided. The output amplifier is coupled to the input amplifier and outputting an output voltage. The diode device is coupled between an output end and an input end of the output amplifier. When a voltage difference between the output end and the input end of the output amplifier is greater than a barrier voltage of the diode device, the diode device is turned on, and an overshoot of the output voltage is reduced. The diode device includes a variable resistor to increase the barrier voltage of the diode device.

A liquid crystal display panel and a display device are provided. The liquid crystal display includes a first common electrode, a second common electrode and pixels. The second common electrode and the first common electrode are electrically independent from each other. First pixels of the pixels are coupled to the first common electrode, and second pixels of the pixels are coupled to the second common electrode. Accordingly, usage or operation of the liquid crystal display panel is more flexible.

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Hsinchu, Taiwan

Chia-Wei Su