Shenzhen Epostar Electronics Limited Co.

Nike, Inc.

Tekcore Co., Ltd.

Chia-Wei Chang

Yu-Hua Hsiao

Dragan Jurkovic

Chang-Chu Liao

Chia-Hung Lin

Shih-Yuan Wu

Wen-Ruei Chang

Chien-Chun Chen

Lung-Han Peng

Han-Ming Wu

Sung-Li Wang

Chin-Yi Lin

An apparatus for buffing a shoe part includes a housing adapted to be articulated around at least a portion of the footwear part. A rotating spindle is positioned in the housing and has a buffing surface for engagement with the footwear part. A carriage is slideably connected to the housing and holds the spindle such that the buffing surface can be moved closer to and further away from the footwear part. An actuator is in the housing and in contact with the carriage. The actuator applies force to the carriage to increase the force of the buffing surface onto the footwear part. A biasing member is in the housing and in contact with the carriage. The biasing member exerts force onto the carriage in a direction opposite the force exerted by the actuator.

Shoe buffing system

A data reading method is provided. The method includes using X read voltage sets to read a target word line, so as to obtain X read results; in a first order, updating a final Gray code index of each of a plurality of target memory cells of the target word line, and obtaining (X&#x2212;1) abnormal Gray code count sets according to the X read results, wherein an iread result among the X read results includes a Gray code corresponding to an iread voltage set of each of the target memory cells, and the Gray code corresponds to one of N Gray code indexes; and selecting (N&#x2212;1) optimized read voltages from (X&#x2212;1)*(N&#x2212;1) read voltages of the corresponding (X&#x2212;1) read voltage sets to form an optimized read voltage set according to the obtained (X&#x2212;1) abnormal Gray code count sets.

Data reading method, storage controller and storage device for optimizing read voltages

A memory management method and a storage controller using the same are provided. The method includes reading a target word-line to identify a plurality of raw Gray code indexes corresponding to a plurality of memory cells of the target word-line; performing a decoding operation on raw data of the target word-line to identify a plurality of decoded Gray code indexes corresponding to the memory cells; calculating a plurality of Gray code absolute bias values corresponding to the memory cells according to the raw Gray code indexes and the decoded Gray code indexes; and identifying one or more abnormal memory cells among the memory cells according to the Gray code absolute bias values; and recording the one or more abnormal memory cells into an abnormal memory cell table, wherein a Gray code absolute bias value of each of the one or more abnormal memory cells is greater than a bias threshold.

Memory management method and storage controller

A memory management method for a storage device having a rewritable non-volatile memory module is provided, wherein the rewritable non-volatile memory module has a plurality of physical units, and each of the physical units has a plurality of word-lines. The method includes: performing a first checking operation on a target physical unit among the physical units according to an occurrence of a specific event; and determining whether a first operation needs to be performed on valid data in the target physical unit according to a checking result of the first checking operation that corresponds to the target physical unit.

A method for manufacturing gallium nitride based transparent conductive oxidized film ohmic electrodes includes forming a transparent conductive film on a GaN layer, forming a transparent conductive hetero-junction of opposing electrical characteristics on a transparent conductive film on the surface of the GaN layer through an ion diffusion process, and laying a metallic thick film on the surface of the transparent conductive hetero-junction for wiring process in the later fabrication operation. Thus through the electron and hole tunneling effect in the ion diffusion process the Fermi level of the hetero-junction may be improved to form an ohmic contact electrode.

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Kaohsiung, Taiwan

Chia-Wei Chang