Au Optronics Corporation

Chia-Tien Peng

An-Thung Cho

Kun-Chih Lin

Chih-Wei Chao

Wei-Ming Huang

Chien-Sen Weng

Ming-Wei Sun

Chun-Hsiun Chen

Wan-Yi Liu

Yu-Cheng Chen

Ho-Chien Wu

Ching-Chieh Shih

Ming-Hsien Lee

Mao-Yi Chang

Long-Sheng Liao

Chao-Shun Liao

Chih-Jen Hu

Chrong-Jung Lin

Ya-Chin King

Feng-Yuan Gan

Cheng-Chiu Pai

Chao-Chien Chiu

Yu-Hsuan Li

Jia-Hong Ye

Hung-Wei Tseng

Shin-Shueh Chen

Chen-Yueh Li

Chih-Cheng Chan

Wu-Hsiung Lin

Ssu-Hui Lu

Chih-Hsiung Chang

Jung-Yen Huang

Yuan-Jun Hsu

Hang-Wei Tseug

Ming-Huang Chuang

Wen-Jen Chiang

Chi-Mao Hung

Shih-Feng Hsu

Wei-Chia Fang

Ching-Sang Chuang

Wei-Min Sun

Chia-Kai Chen

Sheng-Wen Huang

Tsung-Yi Hsu

Yi-Chien Wen

Jen-Pei Tseng

Chieh-Chou Hsu

Hong-Zhang Lin

Chih-Yang Chen

Wei-pang Huang

Chan-Wei Chang

Chien-Shen Weng

Jhen-Yue Li

Huan-Chao Wu

One aspect of the present invention relates to a photovoltaic cell. In one embodiment, the photovoltaic cell includes a first conductive layer, an N-doped semiconductor layer formed on the first conductive layer, a first silicon layer formed on the N-doped semiconductor layer, a nanocrystalline silicon (nc-Si) layer formed on a first silicon layer, a second silicon layer formed on the nc-Si layer, a P-doped semiconductor layer on the second silicon layer, and a second conductive layer formed on the P-doped semiconductor layer, where one of the first silicon layer and the second silicon layer is formed of amorphous silicon, and the other of the first silicon layer and the second silicon layer formed of polycrystalline silicon.

Photovoltaic cells with multi-band gap and applications in a low temperature polycrystalline silicon thin film transistor panel

An active device array substrate includes a flexible substrate, a gate electrode, a dielectric layer, a channel layer, a source electrode, a drain electrode, and a pixel electrode. The flexible substrate has a transistor region and a transparent region adjacent to each other. The gate electrode is disposed on the transistor region. The dielectric layer covers the flexible substrate and the gate electrode. A portion of the dielectric layer disposed on the gate electrode has a first thickness. Another portion of the dielectric layer disposed on the transparent region has a second thickness less than the first thickness. The channel layer is disposed above the gate electrode. The source electrode and the drain electrode are electrically connected to the channel layer. The pixel electrode is disposed on the dielectric layer which is disposed on the transparent region. The pixel electrode is electrically connected to the drain electrode.

Active device array substrate

A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer.

Optical touch device and method of forming photo sensor

The present invention provides a photo sensor, a method of forming the photo sensor, and a related optical touch device. The photo sensor includes a first electrode, a second electrode, a first silicon-rich dielectric layer and a second silicon-rich dielectric layer. The first silicon-rich dielectric layer is disposed between the first electrode and the second electrode for sensing infrared rays, and the second silicon-rich dielectric layer is disposed between the first silicon-rich dielectric layer and the second electrode for sensing visible light beams. The multi-layer structure including the first silicon-rich dielectric layer and the second silicon-rich dielectric layer enables the single photo sensor to effectively detect both infrared rays and visible light beams. Moreover, the single photo sensor is easily integrated into an optical touch device to form optical touch panel integrated on glass.

Photo sensor, method of forming the same, and optical touch device

A method for manufacturing an active device array substrate includes providing a flexible substrate having a transistor region and a transparent region; forming a gate electrode on the transistor region; sequentially forming a dielectric layer and a semiconductor layer to cover the gate electrode and the flexible substrate; removing a part of the semiconductor layer to form a channel layer above the gate electrode and removing a thickness of the dielectric layer disposed on the transparent region, such that a portion of the dielectric layer on the gate electrode has a first thickness, and another portion of the dielectric layer on the transparent region has a second thickness less than the first thickness; respectively forming a source electrode and a drain electrode on opposite sides of the channel layer; and forming a pixel electrode electrically connected to the drain electrode.

Active device array substrate and manufacturing method thereof

A display device includes a substrate, a backplane, a display medium layer, a protective layer, a driving component, a flexible printed circuit (FPC) and a sealant. The backplane and the display medium layer are disposed on the lower side and the upper side of the substrate, respectively. The protective layer covers the display medium layer and prevents moisture and oxygen from permeating into the display medium layer to deteriorate its performance. The sealant surrounds the first side surface of the substrate and the second side surface of the display medium layer, and wraps at least a portion of the driving component and a portion of the FPC. Additionally, a manufacturing method of a display device is also provided.

Display device and method of fabricating the same

A display region and a light sensing region are defined in each pixel region of the OLED touch panel of the present invention. The readout thin film transistor of the light sensing region is formed by the same processes with the drive thin film transistor of the display region. The top and bottom electrodes of the optical sensor are formed by the same processes with the top and bottom electrodes of the OLED. Accordingly, the present invention can just add a step of forming the patterned sensing dielectric layer to the processes of forming an OLED panel to integrate the optical sensor into the pixel region of the OLED panel. Thus, an OLED touch panel is formed.

OLED touch panel and method of forming the same

A method for fabricating a TFT array substrate including the following steps is provided. A substrate having a pixel region and a photosensitive region is provided. A first patterned conductive layer is formed on the substrate, wherein the first patterned conductive layer includes a gate electrode disposed in the pixel region and a first electrode disposed in the photosensitive region, and a photosensitive dielectric layer is formed on the first electrode. A gate insulation layer is formed to cover the gate electrode, the photosensitive dielectric layer and the first electrode. A patterned semiconductor layer is formed on the gate insulation layer above the gate electrode. A source electrode and a drain electrode are formed on the patterned semiconductor layer at two sides of the gate electrode, wherein the gate electrode, the source electrode, and the drain electrode constitute a TFT. A second electrode is formed on the photosensitive dielectric layer.

Thin film transistor array substrate and method for fabricating the same

An OLED display is proposed. The OLED display includes a gate driver for generating a scanning signal, a source driver for generating a data signal, and a plurality of cells arranged in an array. Each cell includes a first transistor for delivering the data signal when receiving the scanning signal, a second transistor for generating a driving current based on a voltage difference between a first supply voltage signal and the data signal, a storage capacitor coupled between the first transistor and an output end of the driving circuit, for storing the data signal, an organic light emitting diode for generating light based on the driving current, an infrared emitting layer for producing infrared ray, and an infrared sensitive layer for sensing the infrared ray reflected by an object.

Organic light emitting diode touch display

A display panel having a pixel region and a sensing region includes a first substrate, a second substrate and a display medium layer. A plurality of pixel structures and at least one photo-voltaic cell device are disposed on the first substrate. The pixel structures are arranged in the pixel region in array, and each of the pixel structures includes a thin film transistor and a pixel electrode electrically connected to the thin film transistor. The photo-voltaic cell device disposed in the sensing region includes a doped semiconductor layer, a transparent electrode layer, a first type doped silicon-rich dielectric layer and a second type doped silicon-rich dielectric layer. The first type doped silicon-rich dielectric layer and the second type doped silicon-rich dielectric layer are disposed between the doped semiconductor layer and the transparent electrode layer. The display medium layer is disposed between the first substrate and the second substrate.

Thin film transistor array substrate, display panel, liquid crystal display apparatus and manufacturing method thereof

A structure of X-ray detector includes a Si-rich dielectric material for serving as a photo-sensing layer to increase light sensitivity. The fabrication method of the X-ray detector including the Si-rich dielectric material needs less photolithography-etching processes, so as to reduce the total thickness of thin film layers and decrease process steps and cost.

X-ray detector and fabrication method thereof

An electronic paper unit including a flexible substrate, a thin film transistor layer, an electronic ink layer, a waterproof layer, and a sealant is provided. The thin film transistor layer is disposed on the flexible substrate. The electronic ink layer is disposed on a surface of the thin film transistor layer. The waterproof layer is disposed on the electronic ink layer. An edge surface of the waterproof layer and an edge surface of the electronic ink layer form a side wall where there is a first acute angle or a first obtuse angle between the side wall and the surface of the thin film transistor layer. The sealant is coated and covered on the side wall and the surface. A method for fabricating the electronic paper unit is also provided.

Electronic paper unit and method for fabricating electronic paper unit

A manufacturing method of a thin film transistor array substrate is provided. In the method, a substrate having a display region and a sensing region is provided. At least a display thin film transistor is formed in the display region, a first sensing electrode is formed in the sensing region, and an inter-layer dielectric layer is disposed on the substrate, covers the display thin film transistor, and exposes the first sensing electrode. A patterned photo sensitive dielectric layer is then formed on the first sensing electrode. A patterned transparent conductive layer is subsequently formed on the substrate, wherein the patterned transparent conductive layer includes a pixel electrode coupled to the corresponding display thin film transistor and includes a second sensing electrode located on the patterned photo sensitive dielectric layer. A manufacturing method of a liquid crystal display panel adopting the aforementioned thin film transistor array substrate is also provided.

Manufacturing method of thin film transistor array substrate and liquid crystal display panel

A method of forming an optical sensor includes the following steps. A substrate is provided, and a read-out device is formed on the substrate. a first electrode electrically connected to the read-out device is formed on the substrate. a photosensitive silicon-rich dielectric layer is formed on the first electrode, wherein the photosensitive silicon-rich dielectric layer comprises a plurality of nanocrystalline silicon crystals. A second electrode is formed on the photosensitive silicon-rich dielectric layer.

Method of forming optical sensor

An optical sensor, method of making the same, and a display panel having an optical sensor. The optical sensor includes a first electrode, a second electrode, a photosensitive silicon-rich dielectric layer, and a first interfacial silicon-rich dielectric layer. The photosensitive silicon-rich dielectric layer is disposed between the first and second electrodes. The first interfacial silicon-rich dielectric layer is disposed between the first electrode and the photosensitive silicon-rich dielectric layer.

Optical sensor, method of making the same, and display panel having optical sensor

Growing community of inventors

Hsin-Chu, Taiwan

Chia-Tien Peng