Chunghwa Picture Tubes, Ltd.

Chia-Sheng Hsieh

Jan-Tian Lian

Hung-Yu Wu

Hsin-Min Fu

Tzu-Yu Ting

Jang-Jeng Liang

A flexible device substrate includes a flexible substrate, a device layer, and a waterproof layer. The flexible substrate has a top surface and a bottom surface disposed opposite to each other. The device layer is disposed on the top surface of the flexible substrate. The waterproof layer is disposed on the bottom surface of the flexible substrate.

Manufacturing method of flexible device substrate

An oxide semiconductor composition comprises graphene, a metal oxide precursor, and a solvent. Based on a total weight of the oxide semiconductor composition, a concentration of the graphene is between 0.01 and 10 wt %, a concentration of the metal oxide is between 0.01 and 30 wt %, and a concentration of the solvent is between 60 and 99.98 wt %.

Oxide semiconductor composition and manufacturing method thereof, oxide thin film transistor and manufacturing method thereof

A method for manufacturing an alignment layer is provided. An alignment material having an ultraviolet reactive functional group is formed on a substrate. A pre-baking process is performed on the alignment material located on the substrate. An ultraviolet polarizer is provided on the substrate. An aligning process is performed on the pre-baked alignment material, so as to irradiate an ultraviolet light to the substrate. The ultraviolet light passes through the ultraviolet polarizer and irradiates to the pre-baked alignment material. A post-baking process is performed on the alignment material after being aligned, so as to fully cure the alignment material.

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Taichung, Taiwan

Chia-Sheng Hsieh