Vanguard International Semiconductor Corporation

Chia-Shen Liu

Chrong-Jung Lin

Wen-Chung Chen

Wen-Hua Wen

A semiconductor device includes a substrate and a conducting structure. The substrate has a first conductivity type and includes a first isolation region, a first implant region, and a second implant region. The first isolation region is disposed along the circumference of the substrate. The first implant region has the first conductivity type, and the second implant region has a second conductivity type that is the opposite of the first conductivity type. The conducting structure is disposed on the substrate, and at least a portion of the conducting structure is located on the first isolation region.

Semiconductor device with conducting structure for reducing parasitic capacitance and improving RC delay

An inductor structure formed on a substrate and extending in a quadrant comprising a first domain, a second domain, a third domain and a fourth domain is provided. The inductor structure comprises an input conducting wire, an output conducting wire and a conducting wire. The conducting wire is coupled between the input conducting wire and the output conducting wire. A first portion of the conducting wire is extended from a start terminal, to the second domain, to the fourth domain, to a stop terminal. A second portion of the conducting wire is extended from the start terminal, to the third domain, to the first domain, to the stop terminal.

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Hsinchu, Taiwan

Chia-Shen Liu