Taiwan Semiconductor Manufacturing Comp. Ltd.

Chia-Ming Pan

Chi-Chung Jen

Yu-Chu Lin

Wen-Chih Chiang

Keng-Ying Liao

Chiang-Ming Chuang

Ming-Hong Su

Mei-Chen Su

Hsin-Chi Chen

Po-Wei Liu

Chih-Ming Lee

Su-Yu Yeh

Hung-Che Liao

Huai-jen Tung

Chien-Hsuan Liu

Chia-Wei Lee

Kuan-Wei Su

Chih-Wei Sung

Yung-Han Chen

Chia-Ta Hsieh

Kun-Tsang Chuang

Yun-Chi Wu

Ping-Pang Hsieh

Kun-tsang Chuang

Pei-Chi Ho

Yong-Shiuan Tsair

A semiconductor device includes a stacked gate structure, a plurality of stacks and a first conductive layer. The stacks are disposed aside the stacked gate structure and arranged along both a first direction and a second direction perpendicular to the first direction, wherein the stacks are extended continuously along the first direction and segmented in the second direction. The first conductive layer is disposed between segmented portions of the stacks along the second direction, wherein top surfaces of the segmented portions of the stacks are higher than a top surface of the first conductive layer.

Semiconductor device having non-continuous wall structure surrounding a stacked gate structure including a conductive layer disposed between segmented portions of the wall structure

A method includes sequentially depositing a floating gate layer, a dielectric structure stack, and a control gate layer over a substrate. A first etching process is performed to pattern the control gate layer, the dielectric structure stack, and a top portion of the floating gate layer to form a control gate, a dielectric structure, and a top portion of a floating gate over a bottom portion of the floating gate layer. A sidewall of the top portion of the floating gate is concave. A first spacer structure is formed on the sidewall of the top portion of the floating gate, a sidewall of the dielectric structure, and a sidewall of the control gate. A second etching process is performed to pattern the bottom portion of the floating gate layer to form a bottom portion of the floating gate after forming the first spacer structure.

Memory device and manufacturing method thereof

In some implementations, one or more semiconductor processing tools may form a first terminal of a semiconductor device by depositing a tunneling oxide layer on a first portion of a body of the semiconductor device, depositing a first volume of polysilicon-based material on the tunneling oxide layer, and depositing a first dielectric layer on an upper surface and a second dielectric layer on a side surface of the first volume of polysilicon-based material. The one or more semiconductor processing tools may form a second terminal of the semiconductor device by depositing a second volume of polysilicon-based material on a second portion of the body of the semiconductor device. A side surface of the second volume of polysilicon-based material is adjacent to the second dielectric layer.

Semiconductor device

A flash memory device includes a floating gate electrode formed within a substrate semiconductor layer having a doping of a first conductivity type, a pair of active regions formed within the substrate semiconductor layer, having a doping of a second conductivity type, and laterally spaced apart by the floating gate electrode, an erase gate electrode formed within the substrate semiconductor layer and laterally offset from the floating gate electrode, and a control gate electrode that overlies the floating gate electrode. The floating gate electrode may be formed in a first opening in the substrate semiconductor layer, and the erase gate electrode may be formed in a second opening in the substrate semiconductor layer. Multiple instances of the flash memory device may be arranged as a two-dimensional array of flash memory cells.

Flash memory device including a buried floating gate and a buried erase gate and methods of forming the same

Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.

Transistor and method for manufacturing the same

Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure, with the first terminal including a first portion of a tunneling layer formed on the substrate, and a first gate formed on the first portion of the tunneling layer. The semiconductor structure includes a second terminal coupled to the substrate and adjacent to the first terminal, with the second terminal including a second portion of the tunneling layer formed on the substrate, a second gate formed on the second portion of the tunneling layer, and a dielectric structure formed on a top surface and side surfaces of the second gate. The semiconductor structure includes a third terminal coupled to an insulating structure and adjacent to the second terminal, with the third terminal including, a third gate formed on the insulating structure.

A semiconductor device is provided. The semiconductor device includes a substrate, a stacked gate structure, and a wall structure. The stacked gate structure is on the substrate and extending along a first direction. The wall structure is on the substrate and laterally aside the stacked gate structure. The wall structure extends along the first direction and a second direction perpendicular to the first direction. The stacked gate structure is overlapped with the wall structure in the first direction and the second direction.

Semiconductor device having a wall structure surrounding a stacked gate structure

A semiconductor structure includes a semiconductor substrate, a transistor, a plurality of isolation structures, and a conductive feature. The transistor is over the semiconductor substrate. The isolation structures are over the semiconductor substrate. The isolation structures define a semiconductor ring of the semiconductor substrate surrounding the transistor. The conductive feature extends vertically in the semiconductor substrate and surrounds the transistor and semiconductor ring. The conductive feature has a rounded corner facing the semiconductor ring from a top view.

Semiconductor structure

A method includes depositing a gate dielectric film over a substrate. A floating gate layer and a control gate layer are deposited over the gate dielectric film. The control gate layer is patterned to form a control gate over the floating gate layer. A top portion of the floating gate layer is patterned. A spacer structure is formed on a sidewall of the control gate and over a remaining portion of the floating gate layer. The remaining portion of the floating gate layer is patterned to form a bottom portion of a floating gate. A ratio of the bottom width of the bottom portion to the middle width of the bottom portion is in a range between about 103% and about 108%. The gate dielectric film is patterned form a gate dielectric layer.

A method for forming a semiconductor is provided. The method includes etching a trench in a semiconductor substrate, in which the trench surrounds a device region of the semiconductor substrate; forming a conductive feature in the trench; and forming a transistor on the device region of the semiconductor substrate after forming the conductive feature.

Semiconductor structure and method for forming the same

A memory device includes a floating gate, a control gate, a spacer structure, a dielectric layer, and an erase gate. The floating gate is above a substrate. The floating gate has a curved sidewall. The control gate is above the floating gate. The spacer structure is in contact with the control gate and the floating gate. The spacer structure is spaced apart from the curved sidewall of the floating gate. The dielectric layer is in contact with the spacer structure and the curved sidewall of the floating gate. The erase gate is above the dielectric layer.

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Tainan, Taiwan

Chia-Ming Pan