Tekcore Co., Ltd.

Tekcove Co., Ltd

Chia-Ming Lee

Jen-Inn Chyi

Hung-Cheng Lin

Yu-Chuan Liu

I-Ling Chen

Nien-Tze Yeh

Wen-Chieh Hsu

Jenn-Hwa Fu

The present invention discloses a light emitting diode (LED) element and a method for fabricating the same, which can promote light extraction efficiency of LED, wherein a substrate is etched to obtain basins with inclined natural crystal planes, and an LED epitaxial structure is selectively formed inside the basin. Thereby, an LED element having several inclines is obtained. Via the inclines, the probability of total internal reflection is reduced, and the light extraction efficiency of LED is promoted.

Light emitting diode element and method for fabricating the same

The present invention discloses a surface roughening method for an LED substrate, which uses a grinding technology and an abrasive paper of from No. 300 to No. 6000 to grind the surface of a substrate to form a plurality of irregular concave zones and convex zones on the surface of the substrate. Next, a semiconductor light emitting structure is formed on the surface of the substrate. The concave zones and convex zones can scatter and diffract the light inside LED, reduce the horizontally-propagating light between the substrate and the semiconductor layer, decrease the probability of total reflection and promote LED light extraction efficiency.

Surface roughening method for light emitting diode substrate

The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer. Next, the substrate is etched to form a plurality of concave zones and a plurality of convex zones with the chemical reaction layer overhead. Next, the chemical reaction layer is removed to form an irregular geometry of the concave zones and convex zones on the surface of the substrate. Then, a semiconductor light emitting structure is epitaxially formed on the surface of the substrate. Thereby, the present invention can achieve a light emitting diode structure having improved internal and external quantum efficiencies.

Light emitting diode structure and method for fabricating the same

The present invention discloses a light emitting diode structure and a method for fabricating the same. In the present invention, a substrate is placed in a solution to form a chemical reaction layer on carved regions; the carved region is selectively etched to form a plurality of concave zones and form a plurality of convex zones; a semiconductor layer structure is epitaxially grown on the element regions and carved regions of the substrate; the semiconductor layer structure on the element regions is fabricated into a LED element with a photolithographic process.

Method for fabricating light emitting diode structure having irregular serrations

A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.

Method for self bonding epitaxy

A light-emitting device comprising a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

Process for manufacturing a light-emitting device

A light-emitting device comprises a light-emitting unit including a plurality of first connecting pads, a base substrate including a plurality of second connecting pads, and a plurality of conductive bumps that connect the first connecting pads of the light-emitting unit to the second connecting pads of the base substrate. In the manufacturing process, a reflow process is performed to bond the conductive bumps to the first and second connecting pads. The light-emitting unit is configured to emit a first light radiation upon the application of an electric current flow, and the base substrate is configured to emit a second light radiation when stimulated by the first light radiation.

Light-emitting device and manufacturing process of the light-emitting device

A light-emitting device comprises a multi-layer structure including one or more active layer configured to irradiate light in response to the application of an electric signal, a transparent passivation layer laid over an outmost surface of the multi-layer stack, a reflector layer laid over the passivation layer, and a plurality of electrode pads coupled with the multi-layer structure. In a manufacture process of the light-emitting device, the reflector layer and the passivation layer are patterned to form at least one opening exposing an area of the multi-layer structure. One electrode pad is formed through the opening of the reflector layer and the passivation layer to connect with the multi-layer structure.

High brightness light-emitting device and manufacturing process of the light-emitting device

According to a preferred embodiment of the present invention, there is provided a novel and optimal semiconductor light emitting device comprising a substrate, an n layer disposed co-extensively on the substrate, an nlayer disposed non-extensively and flush on one side of the n layer. Furthermore, a player is disposed co-extensively on the nlayer of the LED according to the invention, with a p layer further disposed co-extensively on the player. A p cladding layer is disposed co-extensively on the p layer. A multiple quantum well (MQW) layer is disposed co-extensively on the p cladding layer, and an n cladding layer is further disposed co-extensively on the MQW layer. A second n layer is disposed co-extensively on the n cladding layer. An nlayer is disposed co-extensively on the second n layer of the LED according to the invention. After partially etching the device, an n electrode is formed opposite nlayer non-extensively on the surface of n layer, and a second n electrode is formed non-extensively (without etching) upon the nlayer.

Gallium nitride-based semiconductor light emitting device and method

According to a preferred embodiment of the present invention, there is provided a novel and optimal semiconductor light emitting device comprising a substrate, an n layer disposed co-extensively on the substrate, an n layer disposed non-extensively and flush on one side of the n layer. Furthermore, a p layer is disposed co-extensively on the n layer of the LED according to the invention, with a p layer further disposed co-extensively on the p layer. A p cladding layer is disposed co-extensively on the p layer. A multiple quantum well (MQW) layer is disposed co-extensively on the p cladding layer, and an n cladding layer is further disposed co-extensively on the MQW layer. A second n layer is disposed co-extensively on the n cladding layer. An n layer is disposed co-extensively on the second n layer of the LED according to the invention. After partially etching the device, an n electrode is formed opposite n layer non-extensively on the surface of n layer, and a second n electrode is formed non-extensively (without etching) upon the n layer.

Growing community of inventors

Yilan County, Taiwan

Chia-Ming Lee