United Microelectronics Corp.

National Central University

Chia-Ming Kuo

Po-Jen Chuang

Fu-Jung Chuang

Yu-Ren Wang

Chi-Mao Hsu

Guan-Wei Huang

Tsuo-Wen Lu

Chun-Hsien Lin

I-Ming Tseng

Ching-Ling Lin

Wen-An Liang

Chia-Wei Chang

Yuan-Yu Chung

Tsai-Yu Wen

Chia-Yuan Chang

Fu-Yu Tsai

Ying-Wei Yen

Shao-Wei Wang

Nan-Yuan Huang

Ya-Yin Hsiao

Chun-Wei Yu

Shi-You Liu

Hsu Ting

Shih-Cheng Chen

Ching-Han Chen

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.

Semiconductor device and method for fabricating the same

A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the first fin-shaped structure into a first portion and a second portion, and more than two gate structures on the SDB structure. Preferably, the more than two gate structures include a first gate structure, a second gate structure, a third gate structure, and a fourth gate structure disposed on the SDB structure.

A semiconductor device includes a gate structure on a substrate, a first spacer on sidewalls of gate structure, a second spacer on sidewalls of the first spacer, a polymer block adjacent to the first spacer and on a corner between the gate structure and the substrate, an interfacial layer under the polymer block, and a source/drain region adjacent to two sides of the first spacer. Preferably, the polymer block is surrounded by the first spacer, the interfacial layer, and the second spacer.

A method of forming a semiconductor device. A substrate having a fin structure is provided. A dummy gate is formed on the fin structure. A polymer block is formed adjacent to a corner between the dummy gate and the fin structure. The polymer block is subjected to a nitrogen plasma treatment, thereby forming a nitridation layer in proximity to a sidewall of the dummy gate under the polymer block. After subjecting the polymer block to the nitrogen plasma treatment, a seal layer is formed on the sidewall of the dummy gate and on the polymer block. An epitaxial layer is then grown on a source/drain region of the fin structure. The dummy gate is then replaced with a metal gate.

Method for forming semiconductor device

A semiconductor device includes a fin protruding from a substrate and extending in a first direction, a gate structure extending on the fin in a second direction, and a seal layer located on the sidewall of the gate structure. A first peak carbon concentration is disposed in the seal layer. A first spacer layer is located on the seal layer. A second peak carbon concentration is disposed in the first spacer layer. A second spacer layer is located on the first spacer layer.

Semiconductor device and fabrication method thereof

A method for fabricating semiconductor device includes the steps of first providing a substrate having a fin-shaped structure thereon, forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion, and then forming more than one gate structures such as a first gate structure and a second gate structure on the SDB structure. Preferably, each of the first gate structure and the second gate structure overlaps the fin-shaped structure and the SDB structure.

A semiconductor device includes substrate having a fin structure thereon, a gate structure overlying the fin structure, a polymer block at a corner between the gate structure and the fin structure, and a source/drain region on the fin structure. The polymer block includes a nitridation layer in proximity to a sidewall of the gate structure.

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a polymer block on a corner between the gate structure and the substrate; performing a cleaning process; performing an oxidation process by injecting oxygen gas under 750&#xb0; C. to form a first seal layer on sidewalls of the gate structure; and forming a source/drain region adjacent to two sides of the gate structure.

A method for fabricating a semiconductor device includes the steps of: providing a substrate having a NMOS region and a PMOS region; forming a first gate structure on the NMOS region and a second gate structure on the PMOS region; forming a seal layer on the first gate structure and the second gate structure; forming a first lightly doped drain (LDD) adjacent to the first gate structure; forming a second LDD adjacent to the second gate structure; and performing a soak anneal process to boost an oxygen concentration of the seal layer for reaching a saturation level.

Method for fabricating semiconductor device

A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate, forming a polymer block on a corner between the gate structure and the substrate, performing an oxidation process to form a first seal layer on sidewalls of the gate structure, and forming a source/drain region adjacent to two sides of the gate structure. Preferably, the polymer block includes fluorine, bromide, or silicon.

A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure in the fin-shaped structure to divide the fin-shaped structure into a first portion and a second portion, and a gate structure on the SDB structure. Preferably, the SDB structure includes silicon oxycarbonitride (SiOCN), a concentration portion of oxygen in SiOCN is between 30% to 60%, and the gate structure includes a metal gate having a n-type work function metal layer or a p-type work function metal layer.

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Kaohsiung, Taiwan

Chia-Ming Kuo