Au Optronics Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Mediatek Corporation

Sunplus Technology Co., Ltd.

Hon Hai Precision Industry Co., Ltd.

Htc Corporation

Chung Yuan Christian University

Lianhong Art Co., Ltd.

Tsinghua University

Delta Electronics, Inc.

Advanced Semiconductor Engineering, Inc.

National Yang Ming Chiao Tung University

Saft America

Springsoft Usa, Inc.

Chia-Ming Chang

Chi-Wen Liu

Hsin-Chieh Huang

Cheng-Chien Li

Tsung-Yu Chiang

Hsiang-Chih Hsiao

Li-Chun Ko

Ta-Wen Liao

Wei-Shuo Ho

Chun-Yi Chiang

Zong-Long Jhang

Chou-Huan Yu

Che-Yung Lai

Ching-Hwa Yu

Chao-Kai Cheng

Jyun-Ming Lin

Chih-Hao Yeh

Po-Liang Yeh

Chen-Chung Wu

Shih-Chieh Liao

Chun-Nan Lin

Shun-Yong Huang

Shih-Chang Su

Chih-Jian Lin

Han-Tang Chou

Chih-Hsuan Chiu

Jun-Kai Chang

Chen-Pang Tung

Kuang-Hsin Chen

Tzi-Cker Chiueh

Hong-Kai Hsu

Shih-Che Lin

Chia-Hui Chen

Chia-Chi Tsai

Ting-Che Tseng

Yuan Chen

Chieh-Yi Huang

Wen-Ying Chien

I-Lin Hsieh

Jwo-An Lin

Shih-Hsu Huang

Shuo-Hong Wang

Hung-Pin Shih

Chao-Jui Wang

Tsu-Min Liu

Dar-Jen Liu

Jiang-Jin You

Chun-An Chang

Shan-Non Wang

Chia-Tsung Wu

Chi-Ting Kuo

Ko-Jui Lee

Chun-Hung Liu

Bor-Zen Tien

Yi-Hsin Lin

Chih-Chan Ger

Chieh-Hsiang Lin

Tzu-Yu Lin

Chi-Chen Lee

Tsung-Hsiung Wang

Xin-Hung Lin

Wei-Li Lin

Jer-Liang Andrew Yeh

Hsin-Po Wang

Che-Wei Tung

Ping-Hung Chen

Po-Chun Yeh

Jin-Ming Chen

Yuh-Zheng Lee

Shou-Hung Ling

Chun-Wei Wu

Shih-Hao Liang

Wu-Chi Ho

Ming-Wei Chang

Tai-Cheng Liu

Wen-Bing Chu

Tai-Tso Lin

Ying-Ling Liu

Ruei-Pei Chen

Yow-Tyng Nieh

En-Chieh Hsia

Xilin Chen

Frank Cao

Chia-Erh Liu

Ying-Hua Lai

Chung-Ping Liu

Yung-Kuo Ho

Yun-Lung Chang

Chuan-Li Wu

Chun-Hao Su

Shih-Ping Lin

Ching-Piao Chen

Jih-Nan Tai

Ming-Chun Cheng

Chia-Yan Hsu

Hsin-Chien Peng

Chun-Jen Tsai

Ping-Chiang Yang

Shao-Lun Hung

Yu-Zuo Lin

A semiconductor device includes a substrate, at least one semiconductor fin, and at least one epitaxy structure. The semiconductor fin is present on the substrate. The semiconductor fin has at least one recess thereon. The epitaxy structure is present in the recess of the semiconductor fin. The epitaxy structure includes a topmost portion, a first portion and a second portion arranged along a direction from the semiconductor fin to the substrate. The first portion has a germanium atomic percentage higher than a germanium atomic percentage of the topmost portion and a germanium atomic percentage of the second portion.

Semiconductor device and method of forming the same

A multi-layer cathode coating for positive electrode of a rechargeable electrochemical cell (or secondary cell) (such as a lithium-ion secondary battery) and a secondary battery including a cathode having a multi-layer cathode coating. Multi-layer cathode coatings containing blends of one or more cathode active materials in certain weight ratios thereof.

Cathode having multi-layer cathode coating

An electronic device and a manufacturing method thereof are provided. The electronic device includes an array substrate, which includes a substrate, a first conductive layer, a first insulating layer, a second conductive layer, and a second insulating layer. The substrate has a substrate surface. The first conductive layer is located on the substrate surface. The first insulating layer is located on the first conductive layer. The second conductive layer is located on the first insulating layer and includes a first sputtering layer, a second sputtering layer, and a third sputtering layer. The second insulating layer is located on the second conductive layer. The second sputtering layer is located between the first and third sputtering layers, and includes a first metal element. The first sputtering layer includes the first metal element and a second metal element. The third sputtering layer includes the first metal element and a third metal element.

Electronic device and manufacturing method thereof

An X-ray sensing device includes a photosensitive element, lead-containing glass, and an X-ray conversion structure. The photosensitive element is configured to sense light having a first wavelength. The lead-containing glass overlaps the photosensitive element. The X-ray conversion structure is disposed on the lead-containing glass. The lead-containing glass is located between the photosensitive element and the X-ray conversion structure. The X-ray conversion structure is configured to at least partially convert X-rays into light having the first wavelength.

X-ray sensing device

A signal sampling circuit for arc detection includes plural current sensors, plural high pass filter circuits, and an adder circuit. Each of the current sensors is configured to sense a measured current and then generate a sensed voltage signal. One of the high pass filter circuits receives the sensed voltage signal from one of the current sensors and performs high-pass filtering on the sensed voltage signal. The adder circuit performs scaling up, adding, and DC offset on the high-pass filtered sensed voltage signals. Each of the high pass filter circuits is composed of a filter capacitor and a first resistor connected in series with the filter capacitor. The adder circuit is composed of the first resistors, a first operational amplifier, and a second resistor.

Signal sampling circuit for arc detection

A metal structure includes a patterned molybdenum tantalum oxide layer and a patterned metal layer. The patterned molybdenum tantalum oxide layer is disposed on a first substrate, in which the patterned molybdenum tantalum oxide layer includes about 2 to 12 atomic percent of tantalum. Both of an atomic percent of molybdenum and an atomic percent of oxygen of the patterned molybdenum tantalum oxide layer are greater than the atomic percent of tantalum of the patterned molybdenum tantalum oxide layer. The patterned metal layer is disposed on the patterned molybdenum tantalum oxide layer.

Metal structure and method for fabricating same and display panel using same

A scan driver circuit including shift register units and gate control circuits is provided. The shift register units are in a peripheral area of a display panel, and for receiving first clock signals. The gate control circuits are in an active area of the display panel, and for receiving second clock signals. Each shift register unit is coupled with corresponding N of the gate control circuits, and for providing a corresponding one of the first clock signals as a control signal to the corresponding N of the gate control circuits. The corresponding N of the gate control circuits are coupled with corresponding M of gate lines. The corresponding N of the gate control circuits are for providing, according to the control signal, corresponding M of the second clock signals as M gate signals to the corresponding M of gate lines, in which M and N are positive integers.

Display panel and scan driver circuit thereof suitable for narrow border application

A manufacturing method of a semiconductor structure including the following steps is provided: forming a first metal layer on a substrate; forming an insulating layer on the first metal layer; forming an oxide semiconductor material layer on the insulating layer; performing an annealing treatment to the oxide semiconductor material layer; forming an etch stopping material layer on the oxide semiconductor material layer; forming a photoresist material layer on the etch stopping material layer and defining thereof with a half tone photomask to form a photoresist pattern; using the photoresist pattern as a mask, patterning the etch stopping material layer to form an etch stopping pattern, and patterning the oxide semiconductor material layer to form an oxide semiconductor layer; removing the photoresist pattern; using the etch stopping pattern as the mask, patterning the insulating layer; forming a second metal layer on the etch stopping pattern; and patterning the oxide semiconductor layer.

Manufacturing method of a semiconductor structure

A semiconductor device including a first substrate and a thin film transistor disposed on the first substrate is provided. The thin film transistor includes a gate, a semiconductor pattern, a first insulating layer, a source and a drain. The first insulating layer is disposed between the gate and the semiconductor pattern. The source and the drain are separated from each other and disposed corresponding to the semiconductor pattern. At least one of the source and the drain has a first copper patterned layer and a first copper oxynitride patterned layer. The first copper oxynitride patterned layer covers the first copper patterned layer. The first copper patterned layer is disposed between the first copper oxynitride patterned layer and the first substrate. Moreover, a manufacturing method of the semiconductor device is also provided.

Semiconductor device and manufacturing method thereof

An atmospheric water generator for extracting water droplets from ambient air includes an insulating substrate, a plurality of electrode film units, and a liquid crystal/polymer composite film. Each of surface regions of the liquid crystal/polymer composite film has a plurality of liquid crystal molecules each having a hydrophilic functional group and a hydrophobic moiety. Each of the surface regions normally has one of hydrophilic and hydrophobic properties. When a voltage is applied to one of the electrode film units, the respective surface region is switched to have the other one of hydrophilic and hydrophobic properties, to thereby allow the water droplets condensed from the ambient air to move on the surface regions.

Atmospheric water generator for extracting water droplets from ambient air

A cathode of a lithium ion battery is provided. The cathode of a lithium ion battery includes a collector material. A first electrode layer including a lithium manganese iron phosphate (LMFP) material is disposed on a surface of the collector material. A second electrode layer including an active material is disposed on the first electrode layer. The active material includes lithium nickel manganese cobalt oxide (NMC), lithium nickel cobalt aluminum oxide (NCA), lithium cobalt oxide (LCO), Li-rich cathode material, or a combination thereof.

Cathode of lithium ion battery

A semiconductor structure disposed on a substrate including a first metal layer disposed on the substrate, a gate insulating layer disposed on the substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopping pattern disposed on the oxide semiconductor layer, and a second metal layer disposed on the etch stopping layer. The first metal layer includes a gate line. The gate insulating layer covers the gate line. Patterning of the oxide semiconductor layer defines an oxide semiconductor pattern. The second metal layer includes a source electrode and a drain electrode electrically connected to the oxide semiconductor pattern. The etch stopping layer is located between the second metal layer and the oxide semiconductor layer. The second metal layer includes a signal line disposed on the etch stopping layer and is electrically connected to the oxide semiconductor pattern. A manufacturing method of the semiconductor structure is also provided.

Semiconductor structure and manufacturing method thereof

Embodiments of a semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a substrate and a first metal gate structure formed over the substrate. The first metal gate structure has a first width. The semiconductor device structure further includes a first contact formed adjacent to the first metal gate structure and a second metal gate structure formed over the substrate. The second metal gate structure has a second width smaller than the first width. The semiconductor device structure further includes an insulating layer formed over the second metal gate structure and a second contact self-aligned to the second metal gate structure.

Gate structures for semiconductor devices

Growing community of inventors

Hsinchu, Taiwan

Chia-Ming Chang