Phison Electronics Corporation

Chia-Lung Ma

Ming-Chien Huang

Tzu-Chia Huang

Ming-Hui Tseng

Zhen-Yu Weng

A data retry-read method, a memory storage device, and a memory control circuit element are provided. The method includes: detecting a notification signal from a volatile memory module; in response to the notification signal, instructing the volatile memory module to execute N command sequences in a buffer; and after the volatile memory module executes the N command sequences, sending at least one read command sequence, according to M physical addresses involved in the N command sequences, to instruct the volatile memory module to read first data from the M physical addresses.

Data retry-read method, memory storage device, and memory control circuit element

A memory control circuit unit, a memory storage device and a signal receiving method. In one exemplary embodiment, a memory interface circuit of the memory control circuit unit receives a first signal from a volatile memory and adjusts a voltage value of the first signal to a voltage range in response to an internal impedance of the memory interface circuit, where a central value of the voltage range is not equal to a default voltage value, and the default voltage value is one half a sum of a voltage value of a supply voltage of the memory interface circuit and a voltage value of a reference ground voltage. In addition, the memory interface circuit further generates an input signal according to a voltage correspondence between the first signal and an internal reference voltage.

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Taipei, Taiwan

Chia-Lung Ma