Taiwan Semiconductor Manufacturing Comp. Ltd.

Chia-Ling Pai

Fu-Ting Yen

Pinyen Lin

Huang-Lin Chao

Shen-Yang Lee

I-ming Chang

A method for manufacturing a semiconductor device includes: forming a semiconductor stack on a semiconductor substrate in a flat state, the semiconductor stack including sacrificial layer portions and channel layer portions that are alternately stacked over one another; forming source/drain trenches in the semiconductor stack, each of the source/drain trenches penetrating the channel layer portions, the sacrificial layer portions and an upper portion of the semiconductor substrate, and terminating at a lower portion of the semiconductor substrate, so as to form the channel layer portions into channel features and form the sacrificial layer portions into sacrificial features; transforming the semiconductor substrate from the flat state to a bending state; forming source/drain regions in the source/drain trenches, respectively; and reverting the semiconductor substrate from the bending state back to the flat state, so as to induce a strain in the channel features.

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Hsinchu, Taiwan

Chia-Ling Pai