The Johns Hopkins University

National Taiwan University

Academia Sinica

Chia-ling Chien

Yufan Li

Frank Zhu

Qinli Ma

Ssu-Yen Huang

Roger Lake

Robert Cammarata

Donglei Fan

Po-Hsun Wu

Danru Qu

Bingfeng Miao

Jiadong Zang

Gen Yin

A spin-orbit torque device is disclosed, which includes: a magnetic layer; and a non-magnetic layer adjacent to the magnetic layer and comprising a spin-Hall material, wherein the spin-Hall material comprises NiCualloy, and x is in a range from 0.4 to 0.8.

Spin-orbit torque device

A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a magnetic memory layer; and/or sensing electrodes configured to measure a Hall effect of the magnetic memory layer. The SOT generator layer may include topological insulator material, and the magnetic memory layer may include ferromagnetic material with perpendicular magnetic anisotropy. A magneto-electronic device may include: a spin-orbit torque (SOT) generator layer; a first magnetic memory layer on the SOT generator layer; an insulating layer on the first magnetic memory layer; and/or a second magnetic memory layer on the insulating layer. The SOT generator layer may include topological insulator material. The first magnetic memory layer and the second magnetic memory layer may include ferromagnetic material with either perpendicular magnetic anisotropy or in-plane magnetic anisotropy.

Topological insulator-based high efficiency switching of magnetic unit, method and applications

Provided is an electric-current-controllable magnetic unit, including: a substrate, an electric-current channel disposed on the substrate, the electric-current channel including a composite heavy-metal multilayer comprising at least one heavy-metal; a capping layer disposed over the electric-current channel; and at least one ferromagnetic layer disposed between the electric-current channel and the capping layer.

Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applications

A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.

Skyrmion based universal memory operated by electric current

A method for assembling multi-component nano-structures that includes dispersing a plurality of nano-structures in a fluid medium, and applying an electric field having an alternating current (AC) component and a direct current (DC) component to the fluid medium containing the plurality of nano-structures. The electric field causes a first nano-structure from the plurality of nano-structures to move to a predetermined position and orientation relative to a second nano-structure of the plurality of nano-structures such that the first and second nano-structures assemble into a multi-component nano-structure.

System and method for precision transport, positioning, and assembling of longitudinal nano-structures

Provided is a spintronics device. The spintronics can include a ferromagnetic metal layer, a positive electrode disposed on a first surface portion of the ferromagnetic metal layer, and a negative electrode disposed on a second surface portion of the ferromagnetic metal.

Ferromagnets as pure spin current generators and detectors

Featured is a magnetic ring structure including at least a vortex magnetic state such as symmetrically and asymmetrically shaped nanorings (), having small diameters (e.g., on the order of 100 nm). In particular embodiments, the width and thickness of the maxima and minima thereof are located on opposite sides of the nanoring. Also featured are methods for fabricating such symmetrically and asymmetrically shaped nanorings (). Also featured are methods for controlling the reversal process so as to thereby create vortex states in such asymmetric nanorings by controlling the field angle ().

Ferromagnetic nanorings, mediums embodying same including devices and methods related thereto

Featured is a magnetic ring structure including at least a vortex magnetic state such as symmetrically and asymmetrically shaped nanorings (FIG.C), having small diameters (e.g., on the order of 100 run). In particular embodiments, the width and thickness of the maxima and minima thereof are located on opposite sides of the nanoring. Also featured are methods for fabricating such symmetrically and asymmetrically shaped nanorings (FIG.). Also featured are methods for controlling the reversal process so as to thereby create vortex states in such asymmetric nanorings by controlling the field angle (FIG.).

Growing community of inventors

Cockeysville, MD, United States of America

Chia-ling Chien