Lextar Electronics Corporation

Chia-Lin Hsiao

Tsung-Yu Yang

Te-Chung Wang

Nai-Wei Hsu

The disclosure provides a light-emitting diode and a method for manufacturing the same. The light-emitting diode comprises a N-type metal electrode, a N-type semiconductor layer contacted with the N-type metal electrode, a P-type semiconductor layer, a light-emitting layer interposed between the N-type semiconductor layer and the P-type semiconductor layer, a low-contact-resistance material layer positioned on the P-type semiconductor layer, a transparent conductive layer covered the low-contact-resistance material layer and the P-type semiconductor layer, and a P-type metal electrode positioned on the transparent conductive layer.

Growing community of inventors

Taichung, Taiwan

Chia-Lin Hsiao