Epistar Corporation

Opto Tech Corporation

Chia-Liang Hsu

Chien-Fu Huang

Shih-I Chen

Chih-Chiang Lu

Yi-Ming Chen

Min-Hsun Hsieh

Tzu-Chieh Hsu

Chun-Yi Wu

Wen-Luh Liao

Chiu-Lin Yao

Chao-Hsing Chen

Han-Min Wu

Yi-Tang Lai

Ye-Ming Hsu

Chun-Hsien Chang

Hsin-Mao Liu

Hsin-Chih Chiu

Ching-Pei Lin

Jhih-Sian Wang

Shiuan-Leh Lin

Chien-Kai Chung

Hung-Ta Cheng

Chou-Chih Yin

Chia-Fen Tsai

Shao-Ping Lu

Chih-Wei Wei

Wei-Yu Chen

Chen Ou

Yao-Ning Chan

Yao-Ru Chang

Yu-Ren Peng

Ching-Huai Ni

Fu-Chun Tsai

Chang-Da Tsai

Tzu Chieh Hsu

Shu-Ting Hsu

Mei-Chun Liu

Shou-Chin Wei

Pang-Yen Liu

Yi-Chieh Lin

De-Shan Kuo

Shih-Chang Lee

Chien-Yuan Wang

Po-Shun Chiu

Chun-Hsiang Tu

Yi-Wen Huang

Tsung-Hsien Yang

Yung-Fu Chang

Jen-Shui Wang

Alexander Chan Wang

Yi Hsiao

Ching-Shih Ma

Yi Ming Chen

Wei-Che Wu

Jun-Chung Chen

Sheng-Fang Hung

Ching-Bei Lin

Hong-Chi Shih

Chien-Fu Shen

Hsin-Ying Wang

Ming-Der Lin

Ting-Chia Ko

Jui-Hung Yeh

Kwang-Ru Wang

Pei-Hsiang Tseng

Chun-Teng Ko

Jung-kuei Hsu

San Bao Lin

Jhih-Jheng Yang

Kuang-Ping Chao

Chien-Chung Hsu

Chi-Hsing Chen

Hsiang-Ling Chang

Yung-Chiang Hwang

Chui-Chuan Chang

Hung-Yuan Lu

Hsueh-Chih Yu

Guan-Ru He

Guan-Hung Wu

Yuan-Hao Su

Chi-Hsin Ho

Yen-Hu Chu

Ching-Sheng Chen

Hung-Ta Chen

Chien-Kai Chun

Tang-Chung Chao

Jia-Kuan Kuo

This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H, the light-receiving surface is separated from the topmost surface by a second distance H, and His different from H

Optical sensing device and optical sensing system thereof comprising light emitting device and light receiving device completely sandwiched by the topmost surface and bottommost surface of a carrier body with different vertically separated distances

This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is &#x2265;13.

Optical sensing device and optical sensing system thereof comprising a light receiving device capable of receiving a first received wavelength having a largest external quantum efficiency

A light-emitting diode includes a transparent substrate with a first surface, a second surface opposite to the first surface, and a side surface connected to the first surface and the second surface; a first light-emitting structure; a second light-emitting structure; a connecting layer, connected to the first light-emitting structure and the second light-emitting structure; a circuit arranged between the transparent substrate and the first light-emitting structure, and having a portion formed on the first surface without extending to the second surface; and a structure with diffusers, covering the first light-emitting structure and the second light-emitting structure on the first surface without crossing over the side surface.

Light-emitting diode device

A light-emitting device includes a supportive substrate and a first light-emitting element on the supportive substrate. The first light-emitting element includes a first light-emitting stacked layer having a first surface and a second surface opposite to the first surface, and a first transparent layer on the first surface and electrically connected to the first light-emitting stacked layer. A second light-emitting element locates on the supportive substrate and a metal layer electrically connects to the first light-emitting element and the second light-emitting element and physically connects to the first transparent layer. The first light-emitting stacked layer includes a first width and the first transparent layer includes a second width different from the first width from a cross section view of the light-emitting device.

Light-emitting device

The present disclosure provides a method for making a light-emitting device. The method includes steps of providing a first substrate; forming a first semiconductor layer on the first substrate; providing a second substrate; forming an intermediate layer on the second substrate, wherein a refractive index of the intermediate layer is between a refractive index of the second substrate and a refractive index of the first semiconductor layer; and bonding the first semiconductor layer and the intermediate layer.

A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.

Light-emitting element having a reflective structure with high efficiency

An apparatus for transferring a semiconductor device comprises platform comprising a carrier; a positioning unit above the platform and comprising an opening; and an elevating unit connecting the platform and the positioning unit; and a heater.

Apparatus for flipping semiconductor device

A light-emitting structure includes a semiconductor light-emitting element, a first connection point and a reflective element. The semiconductor light-emitting element includes a bottom surface, a top surface opposite to the bottom surface, and a side surface arranged between the bottom surface and the top surface. The first connection point is arranged on the bottom surface. The reflective element includes a first portion arranged right beneath the bottom surface, and a second portion not overlapping the bottom surface and uplifted from a lower elevation lower than the bottom surface to a higher elevation substantially equal to that of the top surface along a curved path.

Light emitting structure

The present application discloses a light-emitting array, comprising a first light-emitting chip; a second light-emitting chip; and a conductive line electrically connected to the first light-emitting chip and the second light-emitting chip, wherein the conductive line includes a first segment and a second segment having a radius curvature different from that of the first segment.

Light-emitting array

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.

Light-emitting device and method of manufacturing thereof

A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.

The present disclosure provides a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer on the substrate; a first window layer comprising a first semiconductor optical layer on the intermediate layer and a second semiconductor optical layer on the first semiconductor optical layer; and a light-emitting stack on the second semiconductor optical layer; wherein a difference between the lattice constant of the intermediate layer and the lattice constant of the first semiconductor optical layer is greater than 2.3 &#x212b;.

A light-emitting device of an embodiment of the present disclosure comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer, wherein the first type semiconductor layer comprises a non-planar roughened surface; a bonding layer formed between the substrate and the semiconductor stack; and multiple recesses each comprising a bottom surface lower than the non-planar roughened surface; and multiple buried electrodes physically buried in the first type semiconductor layer, wherein the multiple buried electrodes are formed in the multiple recesses respectively, and one of the multiple buried electrodes comprises an upper surface; wherein an upper surface of the buried electrode and the non-planar roughened surface of the first type semiconductor layer are substantially on the same plane.

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 &#x3bc;m; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

An encapsulated light-emitting diode device is disclosed. The encapsulated light-emitting diode device includes a circuit carrier including a surface; a light-emitting device including a transparent substrate, the transparent substrate including a first surface and a second surface, and the first surface and the surface of the circuit carrier includes an included angle larger than zero; a light-emitting diode chip located on the first surface of the transparent substrate; and a first transparent glue covering the light-emitting diode chip and formed on the first surface; and a second transparent glue formed on the second surface corresponding to the first transparent glue; wherein the first transparent glue has a circular projection on the first surface and the light-emitting diode chip is substantially located at the center of the circular projection.

Growing community of inventors

Hsinchu, Taiwan

Chia-Liang Hsu