Faraday Technology Corporation

Chia-Ku Tsai

Fu-Yi Tsai

Yan-Hua Peng

Ming-Dou Ker

Tsung-Hsiao Lin

The electrostatic discharge (ESD) protection apparatus includes a first well, a second well, a first doping region, and a second doping region. The first well is disposed in a substrate having a first conductivity type, wherein the first well has a second conductivity type and the substrate is electrically connected to a first pad. The second well is disposed in the first well, wherein the second well has the first conductivity type. The first doping region is disposed in the second well, wherein the first doping region has the second conductivity type, and the first doping region is electrically connected to a second pad. The second doping region is disposed in the second well, wherein the second doping region has the first conductivity type.

Electrostatic discharge protection apparatus

An electrostatic discharge (ESD) protection apparatus includes: an ESD circuit, arranged to perform ESD protection, wherein the ESD circuit includes a first Field Effect Transistor (FET) arranged to release ESD energy; a detection circuit, arranged to perform detection to control the ESD protection apparatus to selectively operate in one of a normal mode and a discharge mode; and a logic circuit, arranged to withstand any oscillation due to resistance-inductance-capacitance (RLC) characteristics of the detection circuit. In the detection circuit, different subsets of a plurality of resistors are respectively combined with a portion of a first serial connection circuit, an entirety of the first serial connection circuit, and a second FET to form different serial connection circuits, to configure the second FET to approach a state of being completely turned off in the normal mode.

An electrostatic discharge (ESD) protection apparatus includes at least one first transistor and at least one second transistor. The first transistor includes a control terminal, a first terminal, a second terminal, and a bulk. The control terminal and the second terminal of the first transistor are coupled to each other. The first terminal of the first transistor is coupled to one of a pad and a power rail line. Likewise, the second transistor also includes a control terminal, a first terminal, and a second terminal. The first terminal of the second transistor is coupled to the bulk of the first transistor, the bulk of the second transistor is coupled to the second terminal of the first transistor, and the second terminal of the second transistor is coupled to the other of the pad and the power rail line.

ESD protection circuit including a resistor and at least one protection transistor; the resistor coupled between an I/O signal node and an internal node of internal circuit, the protection transistors serially coupled between the internal node and a voltage node with each protection transistor comprising a gate and a drain which is coupled to the gate.

ESD protection circuit

Electrostatic discharge (ESD) protection circuit including a first silicon controlled rectifier (SCR) and a trigger circuit; the trigger circuit including a first MOS transistor and a second transistor, triggering the first SCR and providing a second SCR shunt with the first SCR during ESD.

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Taipei, Taiwan

Chia-Ku Tsai