Taiwan Semiconductor Manufacturing Comp. Ltd.

Academia Sinica

Chia-I Lin

Chia-Jen Chen

Chih-Chang Hung

Jim-Min Fang

An Chyi Wei

Chen-Huang Huang

Yun-Lian Lin

Shun-Hui Yang

Yijuang Chern

Nai-Kuei Huang

Jung-Hsing Lin

Yu-Ling Cheng

Shang-Shuo Huang

A semiconductor device structure, along with methods of forming such, are described. The structure includes a first channel region disposed over a substrate, a second channel region disposed adjacent the first channel region, a gate electrode layer disposed in the first and second channel regions, and a first dielectric feature disposed adjacent the gate electrode layer. The first dielectric feature includes a first dielectric material having a first thickness. The structure further includes a second dielectric feature disposed between the first and second channel regions, and the second dielectric feature includes a second dielectric material having a second thickness substantially less than the first thickness. The second thickness ranges from about 1 nm to about 20 nm.

Semiconductor device structure and methods of forming the same

This document describes compounds, extracts, and pharmaceutical compositions relating tospp., and methods for the treatment subjects having metabolic disorders or medical conditions such as Huntington's disease, a trinucleotide repeat disease or abnormal blood glucose levels.

Method of making and using an adenosine analogue

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Taipei, Taiwan

Chia-I Lin