USA as Represented by Secretary of the Navy

The United States of America as Represented by the Director of the

Chia-Hung Yang

Ming-Jey Yang

Ming Yang

Yuli Lyanda-Geller

A transistor having a bottom dielectric layer, a first layer, a second layer, a top dielectric layer, and a gate electrode. The first layer and the second layer form a composite quantum well between the bottom dielectric layer and the top dielectric layer. The first layer, the second layer, and the top dielectric layer are configured to form a hole wire in the first layer. The gate electrode is over a portion of the hole wire and divides the top dielectric layer into a source contact and a drain contact.

Enhancement mode single electron transistor

A heterostructure comprising: a buffer layer; a bottom barrier layer formed on the buffer layer; a quantum well layer formed on the bottom barrier layer; a top barrier layer formed on the quantum well layer; and a p-doped cap layer formed on the top barrier layer; wherein a portion of the cap layer is etched to form conducting electrons in the quantum well layer below the etched portion of the cap layer. A method of etching comprising the steps of: providing a heterostructure; providing an etchant solution comprising acetic acid, hydrogen peroxide, and water; and contacting the etchant solution to the heterostructure to etch the heterostructure.

Nanofabrication of InAs/A1Sb heterostructures

Nanofabrication for InAs/AlSb heterostructures

The present invention discloses both an n+ and a p+ unipolar, three-terminal, resonant-tunneling transistor that can be operated as a hot-electron transistor or a field effect transistor at temperatures at least as low as 77 degree Kelvin. The doped first terminal (collector or gate) is made of 3D metal or semiconductor material. An undoped insulating barrier is deposited on the first terminal. The doped electrically-contacted second terminal (emitter or source), made of a 2D semiconductor material, is deposited on the insulating barrier. An undoped double-barrier resonant-tunneling structure is deposited on the second terminal. A doped third terminal, made of 3D metal or semiconductor material, is deposited on a portion of the double-barrier resonant-tunneling structure. A doped tunneling-contact, made of 3D metal or semiconductor material, is deposited on the double-barrier resonant-tunneling structure so that the tunneling contact is isolated from the third terminal. At a temperature of at least as low as 77 degrees Kelvin, dc current gain between the third terminal and the tunneling-contact is observed when a bias voltage or current is applied to the first terminal. With a bias applied to the first terminal, majority carriers from the tunneling-contact tunnel through the double-barrier resonant-tunneling structure to the second terminal. The majority carriers propagate along the second terminal and tunnel through the double-barrier resonant-tunneling structure to the third terminal.

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Chia-Hung Yang