Winbond Electronics Corporation

Chia-Hung Lin

Lih-Wei Lin

Tsung-Huan Tsai

I-Hsien Tseng

Ju-Chieh Cheng

Ping-Kun Wang

Jun-Yao Huang

Frederick Chen

Po-Wei Huang

A filament forming method includes: performing first stage to apply first bias including gate and drain voltages to a resistive memory unit plural times until read current reaches first saturating state, latching read current in first saturating state as saturating read current, determining whether rate of increase of saturating read current is less than first threshold value; when rate of increase of saturating read current is not less than first threshold value, performing second stage to apply second bias, by increasing gate voltage and decreasing drain voltage, to the resistive memory unit plural times until read current reaches second saturating state, latching read current in second saturating state as saturating read current and determining whether rate of increase of saturating read current is less than first threshold value; finishing the method when rate of increase of saturating read current is less than first threshold value and saturating read current reaches target current value.

Filament forming method for resistive memory unit

A method for forming a memory device is provided. The method includes forming a plurality of memory cells. The method also includes performing a first baking on the memory cells. The method further includes setting a specified current, and after performing the first baking, performing a test process on the memory cells. The test process includes reading the current of the memory cells. When the read current of the memory cells is larger than or equal to the specified current, the test process of the memory cell is done. When the read current of the memory cells is smaller than the specified current, a re-forming process is performed on the memory cells to form a plurality of re-formed memory cells, and then the test process is performed on the re-formed memory cells.

Method for forming memory device

A resistive memory and a data writing method for a resistive memory cell thereof are provided. The method includes: receiving and decoding a column address signal for generating a decoded result, and providing a word line voltage to a word line of the resistive memory cell; providing a constant current to one of a bit line and a source line of the resistive memory cell, and coupling a reference ground voltage to another one of the bit line and the source line of the resistive memory cell.

Resistive memory and data writing method for memory cell thereof

A memory-programming device includes a voltage generator, a resistive random-access memory, a current detector, and a controller. The voltage generator is configured to generate a program voltage. The resistive random-access memory receives the program voltage to generate a program current. The current detector detects the program current. The controller executes a program procedure. The program procedure includes: gradually ramping up the program voltage by the voltage generator and detecting the program current by the current detector; discovering the maximum of the program current to be a reference current; continuing to ramp up the program voltage by the voltage generator and determining whether the program current detected by the current detector is not less than the reference current; controlling the voltage generator to stop generating the program voltage when the program current is not less than the reference current.

Devices and methods for programming a resistive random-access memory

A measurement system including a testing machine and a resistive memory is provided. The resistive memory includes a first storage cell. The first storage cell includes a transistor and a variable resistor. During a specific period, the testing machine provides a write voltage to change the state of the variable resistor. During a maintaining period, the testing machine maintains the level of the write voltage and measures the current passing through the variable resistor. When the current passing through the variable resistor does not arrive at a pre-determined value, the testing machine increases the level of the write voltage. Furthermore, a resistive memory utilizing the testing machine is also provided.

Growing community of inventors

Taichung, Taiwan

Chia-Hung Lin