Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Chia-Hung Lai

Yu-Hua Lee

Kang-Min Kuo

Huan-Chi Tseng

Chin-Tien Yang

Min Cao

Tzong-Sheng Chang

Chien-Mao Chen

Yu-Hsuan Kuo

Jiunn-Jyi Lin

Yen-Bin Huang

Shih-Kai Fan

Yen-Ming Chen

Dian-Hau Chen

Po-Tao Chu

Hong-Hsing Chou

Ching-Wen Cho

Chih-Chien Hung

Jaw-Lih Shih

Hsin-Kuo Chang

Juan-Jann Jou

Astha Sharma

A method of forming a semiconductor structure includes depositing a mask layer over a substrate. The method includes etching the substrate to define a first opening. The method includes depositing a sacrificial material in the first opening. The method includes depositing a dielectric liner along sidewalls of the first opening, wherein a bottom surface of the dielectric liner contacts the sacrificial material. The method includes removing the sacrificial material. The method includes etching the substrate to enlarge the first opening to define a second opening. The second opening includes a first portion extending a first depth from the dielectric material in a first direction perpendicular to a top surface of the substrate, and a second portion extending in a second direction, parallel to the top surface of the substrate. The method includes removing the dielectric liner. The method includes filling the second opening with a dielectric material.

Method of forming shallow trench isolation structure

In embodiments of the present disclosure, a vibrator is used to generate a vibration wave with a variable frequency that can agitate and facilitate the circulation of the processing fluids, thereby enhancing the uniformity and efficiency of the resulting semiconductor device features, the vibrator may be a piezoelectric vibrator or other similar vibrators. In some embodiments, the vibration of the processing fluids can facilitate the processing fluids in circulating in and out of narrow channels or features, or the vibration of the processing fluids can facilitate the bubbling out of the microbubbles entrapped in the processing liquid or entrapped between the surface of the semiconductor wafer and the processing liquid. In another embodiment, the vibrations generated by the vibrator have vibration waves with a variable frequency to avoid resonance that may damage the semiconductor wafer and the features thereon.

Apparatus for supporting a semiconductor wafer and method of vibrating a semiconductor wafer

A semiconductor structure includes a shallow trench isolation (STI) structure. The semiconductor structure includes a substrate having a first surface. A STI structure extends from the first surface into the substrate. The STI structure includes a first portion and a second portion. The first portion extends from the first surface into the substrate, and has an intersection with the first surface. The second portion extends away from the first portion, and has a tip at a distance away from the intersection in a direction parallel to the first surface. The first portion and the second portion are filled with a dielectric material.

Shallow trench isolation structure and method of forming the same

A transparent shell structure for luggage and the like includes an outer shell, a decorative plate, a lining, and a plurality of corner protectors. The outer shell has an inner space with a frame. One side of the decorative plate is a patterned surface. Each of the four corners of the decorative plate has a notch, so that the four sides thereof are bent inside the inner space. The decorative plate is restricted within the outer shell. The lining is attached to the decorative plate and disposed in the inner space of the outer shell with the decorative plate, connecting to the frame by the sides. The corner protectors are connected to the four corners of the outer shell.

Transparent shell structure for luggage and the like

A method for fabricating a microelectronic fabrication employs an undoped silicate glass layer as an etch stop layer when etching a doped silicate glass layer with an anhydrous hydrofluoric acid etchant. The method is particularly useful for forming a patterned salicide blocking dielectric layer when fabricating a complementary metal oxide semiconductor device.

Laminated silicate glass layer etch stop method for fabricating microelectronic product

A method for manufacturing a dual damascene structure, which forms a trench first, is described. The manufacturing method has following steps. First, a substrate with a plurality of semiconductor devices is provided. A first metal layer, a first etching stop layer, a dielectric layer, and a second etching stop layer are subsequently formed thereon. A trench is formed in the dielectric layer at a predetermined depth thereafter, and a sacrificial layer is filled therein and is next planarized. Then a photoresist layer is formed thereon for etching a via. Afterward the photoresist layer and the sacrificial layer are both removed. Following that, the first etching stop layer is etched through to expose the first metal layer. Finally, the via and the trench are filled with a second metal layer.

Method for manufacturing dual damascene structure with a trench formed first

A novel method of forming a bond pad of a semiconductor device and a novel bond pad structure. Two passivation layers are used to form bond pads of a semiconductor device. A portion of the second passivation layer resides between adjacent bond pads, preventing shorting of the bond pads during subsequent wire bonding processes or flip-chip packaging processes.

Bond pad scheme for Cu process

The present invention provides a method of removing photoresist from a wafer surface having a bonding pad using a three step clean composed of (1) a wet cleaning the substrate, (2) a F-containing gas high temperature plasma treatment which prevents the corrosion of aluminum contact pad, and (3) completely striping the photoresist strip using an O.sub.2 dry ash. The invention eliminates metal bonding pad corrosion and the completely removes residual photoresist from keyholes.

Method of stripping photoresist from Al bonding pads that prevents

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Taichung, Taiwan

Chia-Hung Lai