Sinopower Semiconductor, Inc.

Powertip Technology Corporation

Anpec Electronics Corporation

Chia-Hui Chen

Teng-Hao Yeh

Sung-Shan Tai

Chiu-Yuan Huang

Shyh-Yueh Wang

Yen-Liang Chen

Jen-Hao Yeh

Wei-Chieh Lin

Guo-Liang Yang

Li-Cheng Lin

Ho-Tai Chen

Hsin-Yu Hsu

Shih-Chieh Hung

Shian-Hau Liao

Chun-Tsai Chien

Xin-Jiu Wang

A dual-frequency bistable liquid crystal display and the liquid crystal mixture thereof includes liquid crystal cell filled with a liquid crystal mixture which contains dual-frequency liquid crystal, chiral compound, and nematic liquid crystal mixture. The liquid crystal mixture has the characteristics of both the dual-frequency liquid crystal and cholesteric liquid crystal. The dual-frequency bistable liquid crystal display is driven in a frequency modulation mode and can be switched between two optical states by taking advantage of the dielectric anisotropy of the liquid crystal, which results in a short switching time and sharp contrast between two optical states. Furthermore, the maintaining of the two optical states requires no voltage, which does not require the use of a high voltage to destabilize the helical structure of the cholesteric liquid crystal, and does not have to go through a metastable stage. Hence, power consumption and switching time are reduced.

Dual-frequency bistable liquid crystal display and the liquid crystal mixture thereof

A method of forming a contact opening in a semiconductor substrate is presented. A plurality of trench gates each having a projecting portion are formed in a semiconductor substrate, and a stop layer is deposited over the semiconductor substrate extending over the projecting portions, wherein each portion of the stop layer along each of the sidewalls of the projecting portions is covered by a spacer. By removing the portions of the stop layer not covered by the spacers by utilizing a relatively higher etching selectivity of the stop layer to the spacers, the openings between adjacent projecting portions with an L-type shape on each sidewall can be formed, and a lithography process can be performed to form self-aligned contact openings thereafter.

Method of forming a self-aligned contact opening in MOSFET

The present invention provides a trench type power transistor device including a semiconductor substrate, at least one transistor cell, a gate metal layer, a source metal layer, and a second gate conductive layer. The semiconductor substrate has at least one trench. The transistor cell includes a first gate conductive layer disposed in the trench. The gate metal layer and the source metal layer are disposed on the semiconductor substrate. The second gate conductive layer is disposed between the first gate conductive layer and the source metal layer. The second gate conductive layer electrically connects the first gate conductive layer to the gate metal layer, and the second gate conductive layer is electrically insulated from the source metal layer and the semiconductor substrate.

Trench type power transistor device

A semiconductor device having integrated MOSFET and Schottky diode includes a substrate having a MOSFET region and a Schottky diode region defined thereon; a plurality of first trenches formed in the MOSFET region; and a plurality of second trenches formed in the Schottky diode region. The first trenches respectively including a first insulating layer formed over the sidewalls and bottom of the first trench and a first conductive layer filling the first trench serve as a trenched gate of the trench MOSFET. The second trenches respectively include a second insulating layer formed over the sidewalls and bottom of the second trench and a second conductive layer filling the second trench. A depth and a width of the second trenches are larger than that of the first trenches; and a thickness of the second insulating layer is larger than that of the first insulating layer.

Method of manufacturing semiconductor device having integrated MOSFET and Schottky diode

The present invention discloses a REPEATED-SCAN driving method, which applies to a field sequential color liquid crystal display, wherein each sequential-color cycle of the multiplex-scan signal has at least two stages of scans to increase the luminous fluxes of all colors of backlights and bring closer the total amounts of fluxes, whereby is achieved higher color saturation and better flux uniformity between the rows. Further, the method of the present invention controls the backlights to form dark stages between the intervals respectively of two different colors of the backlights and controls the dark stage to coincide with a color-mixing interval, which is caused by response delay of liquid crystal, to prevent from color distortion caused by color mixing. Therefore, the present invention can generate the pure colors and the designed derived colors accurately.

Repeated-scan driving method for field sequential color liquid crystal display

Growing community of inventors

Taichung, Taiwan

Chia-Hui Chen