Taiwan Semiconductor Manufacturing Comp. Ltd.

National Yang Ming Chiao Tung University

Macronix International Co., Ltd.

Moxa Inc.

Raydium Serniconductor Corporation

Chia-Hua Chang

Shih-Ming Chang

Chien-Chih Chen

Chun-Hung Liu

Hua-Shu Ivan Wu

Chien-Cheng Chen

Yueh-Chin Lin

Wen Lo

Hsin-Wei Wu

Ta-Wei Ou

Edward Yi Chang

Yi Chang

Wei-Hua Chieng

Tsung-Mu Lai

Yen-Hao Shih

Jenn-Gwo Hwu

Chih-Hung Wu

Hao-Chung Kuo

Chun-Yu Lin

Chih-Cheng Chou

Jung-Yu Hsieh

Ching-Hua Chiu

Ming-Tsan Peng

Shyr-Long Jeng

Shih-Chien Liu

Pei-Chen Yu

Chen-Ting Lin

Sung-Wei Chou

Yi-Lin Yang

Mao-Hung Yang

Bin-Han Lue

Min-Hsiang Hsu

Yu-Kong Chen

Ting-En Shie

Lu-Che Huang

Peichen Yu

Bing-Mau Chen

Chan-Hung Huang

Chen-Hao Kuo

Chi Hang Leong

Chin-Sheng Yang

Tsun-Hsi Wang

You-Long Sie

Jwu-Shen Hu

Chien-Hsun Chiang

An electron beam lithography system and an electron beam lithography process are disclosed herein for improving throughput. An exemplary method for increasing throughput achieved by an electron beam lithography system includes receiving an integrated circuit (IC) design layout that includes a target pattern, wherein the electron beam lithography system implements a first exposure dose to form the target pattern on a workpiece based on the IC design layout. The method further includes inserting a dummy pattern into the IC design layout to increase a pattern density of the IC design layout to greater than or equal to a threshold pattern density, thereby generating a modified IC design layout. The electron beam lithography system implements a second exposure dose that is less than the first exposure dose to form the target pattern on the workpiece based on the modified IC design layout.

Dummy insertion for improving throughput of electron beam lithography

A connector device is provided, including a first housing, a circuit assembly, a second housing, and a connector. The circuit assembly is disposed on the first housing, and has a first connecting port and a second connecting port. The second housing is detachably engaged with the first housing. The connector is disposed on the second housing, and has an opening and a terminal. When the first housing is engaged with the second housing and the opening faces the first direction, the terminal is electrically connected to the first connecting port. When the first housing is engaged with the second housing and the opening faces the second direction, the terminal is electrically connected to the second connecting port. The first direction is different from the second direction.

First housing with two connector ports selectively connected to electrical connector on second housing

A receiver front-end circuit and an operating method thereof are disclosed. The receiver front-end circuit includes a common-mode suppression circuit and a rear-stage circuit. The common-mode suppression circuit is used to receive an external input common-mode voltage signal and perform common-mode noise suppression processing on the external input common-mode voltage signal, and then output an internal input common-mode voltage signal. The rear-stage circuit is coupled to the common-mode suppression circuit and used to receive the internal input common-mode voltage signal. The dynamic swing of the internal input common-mode voltage signal is smaller than the dynamic swing of the external input common-mode voltage signal.

Receiver front-end circuit and operating method thereof

A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.

Semiconductor device

A sun-chasing device is provided, including a base, a first transmitter disposed on the base, a second transmitter, a support, a carrier pivotally connected to the support for carrying a solar module, a first supporting component pivotally connected to the first transmitter and the carrier, and a second supporting component pivotally connected to the second transmitter and the carrier. The sun-chasing device has great rigidity and carrying ability against strong wind, and has great precision and rotation angle, such that a solar plate can precisely aim at sun for long time and thus the efficiency of a solar module is significantly increased.

Sun-chasing device

A method for forming a T-shaped gate is provided. The method includes providing a substrate. Then, a photoresist structure is formed over the substrate. The photoresist structure includes two development rates. Next, a mask with an opening is formed over the photoresist structure to pattern the photoresist structure. An angle exposure is applied to the photoresist structure, and the exposed photoresist structure is developed to form a T-shaped notch. A width of the T-shaped notch is gradually reduced from a top portion thereof to a bottom portion to expose a surface of the substrate. Then, a gate metal is deposited in the T-shaped notch. Thereafter, the patterned photoresist structure is removed to form the T-shaped gate.

Method for forming T-shaped gate structure

An ion sensor includes: a conductive base structure including a substrate and an electrode film formed on the substrate; a plurality of ion-sensitive nanorods protruding from the electrode film; and an encapsulant enclosing the conductive base structure, surrounding the ion-sensitive nanorods, and formed with a window for exposing the ion-sensitive nanorods. Each of the ion-sensitive nanorods has a conductive core and an ion-sensitive layer formed on and enclosing the conductive core. The ion-sensitive material exhibits an ion selectivity of absorbing an ion of interest thereon for inducing a surface potential corresponding to concentration of the ion of interest.

Ion sensor for measuring ion concentration of a solution

A method for fabricating a GaN-based thin film transistor includes: forming a semiconductor epitaxial layer on a substrate, the semiconductor epitaxial layer having a n-type GaN-based semiconductor material; forming an insulating layer on the semiconductor epitaxial layer; forming an ion implanting mask on the insulating layer, the ion implanting mask having an opening to partially expose the insulating layer; ion-implanting a p-type impurity through the opening and the insulating layer to form a p-doped region in the n-type GaN-based semiconductor material, followed by removing the insulating layer and the ion implanting mask; forming a dielectric layer on the semiconductor epitaxial layer; partially removing the dielectric layer; forming source and drain electrodes; and forming a gate electrode.

Method for fabricating a GaN-based thin film transistor

Methods of fabricating a microelectromechanical structure are provided. An exemplary embodiment of a method of fabricating a microelectromechanical structure comprises providing a substrate. A first patterned sacrificial layer is formed on portions of the substrate, the first patterned sacrificial layer comprises a bulk portion and a protrusion portion. A second patterned sacrificial layer is formed over the first sacrificial layer, covering the protrusion portion and portions of the bulk portion of the first patterned sacrificial layer, wherein the second patterned sacrificial layer does not cover sidewalls of the first patterned sacrificial layer. An element layer is formed over the substrate, covering portions of the substrate, the first patterned sacrificial layer and second patterned sacrificial layer. The first and second patterned sacrificial layers are removed, leaving a microstructure on the substrate.

Methods of fabricating a micromechanical structure

A method of forming thin-film structure by oblique-angle deposition is provided. The method includes the steps of: evaporating target source in a chamber by an electron beam evaporation system, and introducing process gas into the chamber and adjusting tilt angle of the evaporation substrate and controlling temperature in the chamber during evaporation to form thin-film on a evaporation substrate by oblique-angle deposition, and then annealing the evaporation substrate to form a thin-film having porous nanorod microstructure.

Method of forming thin-film structure by oblique-angle deposition

A manufacturing method of a charge-trapping memory device is provided. This method includes forming a stacked structure having at least a charge-trapping medium. An annealing process in a hydrogen gas is then performed on the stacked structure subsequent to the device fabrication process. The annealing process is conducted at a temperature of about 350&#xb0; C. to 450&#xb0; C. and with the concentration of the hydrogen gas greater than 0.5 mole percent.

Method for fabricating charge-trapping memory

The present disclosure provides a system and method for recognizing a defect image associated with a semiconductor substrate. In one example, the method includes collecting defect data of the defect image by testing and measuring the semiconductor substrate, extracting a pattern from the defect data, normalizing a location, orientation, and size of the pattern, and identifying the pattern after the pattern is normalized.

Translation engine of defect pattern recognition

Growing community of inventors

Taipei, Taiwan

Chia-Hua Chang