Taiwan Semiconductor Manufacturing Comp. Ltd.

National Yang Ming Chiao Tung University

Chia Hsing Wu

Yen-Teng Ho

Chenming Hu

Shu-Jui Chang

Chen Han Chou

Kai-Yu Peng

Cheng Hung Shen

A device comprises a plurality of 2D semiconductor nanostructures, a gate structure, a source region, and a drain region. The plurality of 2D semiconductor nanostructures extend in a first direction above a substrate and arranged in a second direction substantially perpendicular to the first direction. The gate structure surrounds each of the plurality of 2D semiconductor nanostructures. The source region and the drain region are respectively on opposite sides of the gate structure.

Transistors having two-dimensional semiconductor channels

Growing community of inventors

Taipei, Taiwan

Chia Hsing Wu