National Sun Yat-sen University of Kaohsiung

Chia-Ho Hsieh

Ming-Chi Chou

I-Kai Lo

Yu-Chi Hsu

Wen-Yuan Pang

A homo-material heterophased quantum well includes a first structural layer, a second structural layer and a third structural layer. The second structural layer is sandwiched between the first and third structural layers. The first structural layer, second structural layer and third structural layer are formed by growing atoms of a single material in a single growth direction. The energy gap of the second structural layer is smaller than that of the first and third structural layers.

Homo-material heterophased quantum well

A manufacturing method for three-dimensional GaN epitaxial structure comprises a disposing step, in which a substrate of LiAlOand a source metal of Ga are disposed inside an vacuum chamber. An exposing step is importing N ions in plasma state and generated by a nitrogen source into the chamber. A heating step is heating up the source metal to generate Ga vapor. A growing step is forming a three-dimensional GaN epitaxial structure with hexagonal micropyramid or hexagonal rod having a broadened disk-like surface on the substrate by reaction between the Ga vapor and the plasma state of N ions.

Growing community of inventors

Kaohsiung, Taiwan

Chia-Ho Hsieh