United Microelectronics Corp.

Chia-His Chen

Teng-Chun Tsai

Chia-Lin Hsu

Po-Cheng Huang

Chih-Hsun Lin

Yen-Ming Chen

Chun-Wei Hsu

Chang-Hung Kung

A poly opening polish process includes the following steps. A semi-finished semiconductor component is provided. The semi-finished semiconductor component includes a substrate, a gate disposed on the substrate, and a dielectric layer disposed on the substrate and covering the gate. A first polishing process is applied onto the dielectric layer. A second polishing process is applied to the gate. The second polishing process utilizes a wetting solution including a water soluble polymer surfactant, an alkaline compound and water. The poly opening polish process can effectively remove an oxide residue formed in the chemical mechanical polish, thereby improving the performance of the integrated circuit and reducing the production cost of the integrated circuit.

Poly opening polish process

Growing community of inventors

Kaohsiung, Taiwan

Chia-His Chen