Other

National Science Council

The Ishizuka Research Institute, Ltd.

Osaka Diamond Industrial Co.

Lite-on Technology Corporation

Chia-Fu Chen

Hiroshi Ishizuka

Satoru Hosomi

Ensei Ko

Tsao-Ming Hong

Sheng-Hsiung Chen

Kazuhito Nishimura

Kai-Hsiang Liu

The present invention discloses a voltage adjusting system and method for adjusting a driving voltage of a thermal print head by utilizing an electronic variable resistor. The voltage adjusting system includes a power converter, a voltage divider, an analog-to-digital converter (ADC), and a controller. The system and method of the present invention obtains a detecting voltage value through a feedback mechanism and the ADC, and then utilizes the detecting voltage value to control the electronic variable resistor implemented in the voltage divider to adjust the driving voltage of the thermal print head.

Voltage adjusting system and method for adjusting driving voltage of thermal print head

The present invention provides a process for selectively depositing diamond films, which includes two stages of diamond deposition and the gas source used is a mixture of C.sub.x H.sub.y plus CO.sub.2 or C.sub.x H.sub.y O.sub.z plus CO.sub.2. In the period between the first and second stage, the substrate is immersed in an aqueous solution of HF plus HNO.sub.3. The obtained diamond films exhibit good crystallinity and selectivity and the growth rate is fast.

Process for selectively depositing diamond films

A method is provided for efficiently producing an entirely quality-controlled CVD diamond. A CVD process is interrupted at an early stage and the deposit is taken out of the reaction chamber, before a significant mass is accumulated, and is inspected by means of cathodoluminescence. The spectrum are compared with a given reference in terms of peak position, half width and 20%-value width in coordination. The observed deviation allows to determine whether to maintain or alter the settings. A diamond substance of acceptable quality which is properly specified in terms of the CL parameters is also provided.

Method of producing diamond of controlled quality and product produced

The present invention provides a process for depositing diamond by chemical vapor deposition without using conventionally-used hydrogen, which is an explosive gas, as a reaction gases. The process includes contacting a substrate with a two-component gas mixture, under the conditions of a substrate temperature of 150.degree. C.-900.degree. C., a pressure of 1-50 torr, an input microwave power of 250-450 W. The two-component gas mixture is a hydrocarbon (C.sub.x H.sub.y) plus CO.sub.2 with a flow rate ratio of the C.sub.x H.sub.y to CO.sub.2 of 0.2-0.8, or a gasified liquid state oxygen-containing hydrocarbon (C.sub.x H.sub.y O.sub.z) plus CO.sub.2 with a flow rate ratio of the C.sub.x H.sub.y O.sub.z to CO.sub.2 of 12-17. High quality diamond can be obtained even at low temperature of 180.degree. C.

Process for depositing diamond by chemical vapor deposition

A method of forming boron-doped diamond film by, chemical vapor deposition (CVD) utilizing two-component system reactant gas doped with trimethyl borate.

Method of forming a boron-doped diamond film by chemical vapor deposition

Making a diamond substance exhibiting a cathodoluminescence spectrum with the peak at a photon energy greater than 2.8 eV (electron volt), the half-value and 20%-value width not exceeding 0.5 eV and 0.8 eV, respectively, comprising: providing a substrate in a closed chamber, introducing a matrix gas comprising H.sub.2 and one selected from hydrocarbon and CO to said chamber, exciting the gas to create a plasma while heating said substrate to a temperature of at least 700.degree. C. and, thus, causing deposition and growth of diamond substance which is crystallographically diamond, controlling parameters of the deposition by means of the cathodoluminescence record and recovering the diamond substance from the chamber.

Method of producing diamond of controlled quality

Diamond abrasive comprising a mass of idiomorphic crystal grits which each have an irregular shaped core of diamond formed under pressure where diamond is thermodynamically favored phase, and a growth layer of diamond and/or diamond-like carbon formed over said core by chemical vapor deposition.

Growing community of inventors

Hsinchu, Taiwan

Chia-Fu Chen