United Microelectronics Corp.

Chia-Fang Lin

Tong-Yu Chen

Chien-Li Kuo

Yung-Chang Lin

Ming-Tse Lin

Kuei-Sheng Wu

A method for manufacturing an interconnect structure with air gaps includes the following steps. A substrate including a first insulating layer formed thereon is provided. Plural conductive lines are formed in the first insulating layer. A patterned hard mask is formed on the first insulating layer and the conductive lines and exposes portions of the first insulating layer and portions of the conductive lines. The exposed portions of the first insulating layer are then removed to form a plurality of recesses in the first insulating layer. After that, a second insulating layer and a third insulating layer are formed in the recesses to seal the recesses and to form a plurality of air gaps in the recesses. At least two air gaps are respectively formed at two sides of one conductive line of the plurality of conductive lines. A via structure is then formed on the one conductive line.

Interconnect structure, interconnect layout structure, and manufacturing method thereof

An interconnect layout structure, having a plurality of air gaps, includes a substrate having an insulating material disposed thereon and a conductive line disposed in the insulating material and extending along a first direction. The air gaps are formed in the insulating material and are arranged end-to-end along the first direction and immediately adjacent to a same side of the conductive line. A patterned hard mask is disposed on the conductive line and has a sidewall extending along a second direction that is perpendicular to the first direction and passing between the adjacent air gaps from the top view. A via structure is formed on the conductive line and is electrically connected to the conductive line.

Interconnect structure

An interconnect layout structure having air gaps includes a plurality of air gaps extended along a direction, and at least a first interconnect unit disposed in between the air gaps. The first interconnect unit includes a first conductive line, a first landing mark situated on the first conductive line and a first via structure situated on the first landing mark. The first via structure penetrates the first landing mark and is electrically connected to the first conductive line. And the first landing mark physically separates the air gaps arranged in a straight line.

The present invention provides a semiconductor device with a shielding structure. The semiconductor device includes a substrate, an RF circuit, a shielding structure and an interconnection system. The substrate includes an active side and a back side. The RF circuit is disposed on the active side of the substrate. The shielding structure is disposed on the active side and encompasses the RF circuit. The shielding structure is grounded. The shielding structure includes a shielding TST which does not penetrate through the substrate. The interconnection system is disposed on the active side of the substrate. The interconnection system includes a connection unit providing a signal to the RF circuit.

Semiconductor device having through silicon trench shielding structure surrounding RF circuit

A TSV structure includes a through via connecting a first side and a second side of a wafer, a conductive layer which fills up the through via, a through via dielectric ring surrounding and directly contacting the conductive layer, a first conductive ring surrounding and directly contacting the through via dielectric ring as well as a first dielectric ring surrounding and directly contacting the first conductive ring and surrounded by the wafer.

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Hsinchu, Taiwan

Chia-Fang Lin